Fig. 1. AFM images of the MQW samples on (a) planar, (b) HTA planar, (c) ELO, and (d) HTA ELO templates.

Fig. 2. Panchromatic CL topograms at 80 K of the MQW samples on (a) planar, (b) HTA planar, (c) ELO, and (d) HTA ELO templates.

Fig. 3. Cross-sectional TEM images of the MQW samples on (a) and (b) HTA planar, (c) and (d) ELO, and (e) and (f) HTA ELO templates under different diffraction contrast conditions (g→ vector displayed in each image).

Fig. 4. (a) LIV characteristics of the UVC-LEDs on different templates, measured on-wafer, in bottom emission configuration under cw operation. (b) TDD determined by HRXRD and cross-sectional TEM and DSD determined by CL topograms. The IQE was estimated by SiLENSe simulations using the model of Karpov et al. [26] and from the EL results at j=13  A/cm2.

Fig. 5. Integrating sphere measurements of the output power of UVC-LED chips encapsulated with a UV-transparent polymer on ELO (red) and HTA ELO (black) templates under cw operation. Inset shows the EL spectrum on HTA ELO template at 20 mA.