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Photonics Research, Volume. 8, Issue 4, 589(2020)

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Norman Susilo1、*, Eviathar Ziffer1, Sylvia Hagedorn2, Leonardo Cancellara3, Carsten Netzel2, Neysha Lobo Ploch2, Shaojun Wu1, Jens Rass2, Sebastian Walde2, Luca Sulmoni1, Martin Guttmann1, Tim Wernicke1, Martin Albrecht3, Markus Weyers2, and Michael Kneissl1,2
Author Affiliations
  • 1Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
  • 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
  • 3Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
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    Article index updated: Jun. 17, 2024

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    The article is cited by 51 article(s) from Web of Science.
    The article is cited by 2 article(s) CLP online library. (Some content might be in Chinese.)
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    Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Carsten Netzel, Neysha Lobo Ploch, Shaojun Wu, Jens Rass, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Martin Albrecht, Markus Weyers, Michael Kneissl, "Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire," Photonics Res. 8, 589 (2020)

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    Paper Information

    Category: Optoelectronics

    Received: Dec. 10, 2019

    Accepted: Feb. 1, 2020

    Published Online: Mar. 31, 2020

    The Author Email: Norman Susilo (norman.susilo@physik.tu-berlin.de)

    DOI:10.1364/PRJ.385275

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology