Experimental investigation on the instability for NiO/β-Ga2O3 heterojunction-gate FETs under negative bias stress

Zhuolin Jiang; Xiangnan Li; Xuanze Zhou; Yuxi Wei; Jie Wei; Guangwei Xu; Shibing Long; Xiaorong Luo

doi:10.1088/1674-4926/44/7/072803

Journal of Semiconductors, Volume. 44, Issue 7, 072803(2023)

Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

Zhuolin Jiang¹, Xiangnan Li¹, Xuanze Zhou², Yuxi Wei¹, Jie Wei¹, Guangwei Xu^2、*, Shibing Long², and Xiaorong Luo^1、**

¹State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

²School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

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References(18)

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Zhuolin Jiang, Xiangnan Li, Xuanze Zhou, Yuxi Wei, Jie Wei, Guangwei Xu, Shibing Long, Xiaorong Luo. Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress[J]. Journal of Semiconductors, 2023, 44(7): 072803

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Paper Information

Category: Articles

Received: Jan. 30, 2023

Accepted: --

Published Online: Aug. 7, 2023

The Author Email: Xu Guangwei (xugw@ustc.edu.cn), Luo Xiaorong (xrluo@uestc.edu.cn)

DOI:10.1088/1674-4926/44/7/072803

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