Fig. 1. (Color online) The process flow for transferring β-Ga₂O₃ thin film onto SiC (or Si) by ion-cutting. Reprinted from Xu et al.^[4]. Copyright 2021, with permission from IEEE.

Fig. 2. (Color online) Benchmarking the measured μ_eff of GaOSiC MOSFETs against the reported Hall mobility and μ_eff of bulk β-Ga₂O₃ materials and devices (data from Ref. [7] and references therein). Reprinted from Wang et al.^[7]. Copyright 2021, with permission from IEEE.

Fig. 3. (Color online) Benchmarking R_ON,sp versus V_br for the heterogeneous GaOSiC MOSFETs with the reported β-Ga₂O₃ transistors (data from Ref. [10] and references therein). Reprinted from Wang et al.^[10]. Copyright 2022, with permission from IEEE.