Optoelectronics Letters, Volume. 9, Issue 1, 34(2013)

A new method to characterize the metallic-oxide films for grayscale lithography

Li-ping SUN1、*, Shuang-gen ZHANG2, Zhe WANG1, Jia-chun DENG1, and Jiang Lü1
Author Affiliations
  • 1School of Science, Tianjin University of Technology, Tianjin 300384, China
  • 2Tianjin Key Laboratory of Film Electronic and Communication Device, Engineering Research Center of Communication
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    In order to characterize the metallic-oxide grayscale films fabricated by laser direct writing (LDW) in indium film, a new method with micro-Raman spectroscopy and atomic force microscope (AFM) is proposed. Raman spectra exhibit the characteristic band of In2O3 centered at 490 cm-1, in which the intensities increase with the decreasing optical density of the In-In2O3 grayscale films. The mapping information of Raman spectra shows that the signal intensities of the film in the same grayscale area are uniform. Combining with the information of In-In2O3 grayscale film from AFM, the quantitative relationship between the concentration of In2O3 and the Raman signal intensity is shown. Compared with the conventional methods, the resolution of micro-Raman scattering method is appropriate, and the scanning speed is proper to analyze the structure of metallic-oxide grayscale films.

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    SUN Li-ping, ZHANG Shuang-gen, WANG Zhe, DENG Jia-chun, Lü Jiang. A new method to characterize the metallic-oxide films for grayscale lithography[J]. Optoelectronics Letters, 2013, 9(1): 34

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    Paper Information

    Received: Oct. 5, 2012

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Li-ping SUN (lipingsunnk@163.com)

    DOI:10.1007/s11801-013-2351-9

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