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Chinese Optics Letters, Volume. 17, Issue 6, 061403(2019)

12 W high power InGaAsP/AlGaInP 755 nm quantum well laser

H. Martin Hu1,2, Jianyang Zhao3, Weimin Wang3, James Ho1,2, Langxing Kuang3, and Wenbin Liu3、*
Author Affiliations
  • 1Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
  • 2Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China
  • 3Shenzhen Raybow Optoelectronics Co., Ltd., Shenzhen 518055, China
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    Cited By

    [1] Marius Gro?mann, Michael Jetter, Peter Michler. InGaAsP VECSEL for watt-level output at a wavelength around 765?nm. Optics Letters, 47, 2178(2022).

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    H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu. 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser[J]. Chinese Optics Letters, 2019, 17(6): 061403

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 21, 2019

    Accepted: Mar. 14, 2019

    Published Online: Jun. 12, 2019

    The Author Email: Wenbin Liu (liuwenbin@raybowlaser.com)

    DOI:10.3788/COL201917.061403

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology