Chinese Optics Letters, Volume. 17, Issue 6, 061403(2019)

12 W high power InGaAsP/AlGaInP 755 nm quantum well laser

H. Martin Hu1,2, Jianyang Zhao3, Weimin Wang3, James Ho1,2, Langxing Kuang3, and Wenbin Liu3、*
Author Affiliations
  • 1Research Institute of Tsinghua University in Shenzhen, Shenzhen 518057, China
  • 2Guangdong Provincial Key Laboratory of Optomechatronics, Shenzhen 518057, China
  • 3Shenzhen Raybow Optoelectronics Co., Ltd., Shenzhen 518055, China
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    Figures & Tables(6)
    Schematic epitaxial structure for product RB-755.
    (a) Calculated near-field distribution in the vertical direction, fundamental mode only. The confinement factor Γ is approximately 0.7%. (b) Calculated far-field divergence, with a full width at half maximum (FWHM) of 35.82°.
    (a) P-I-V curves of product RB-755. (b) Spectrum of a single emitter in COS packaging under 11.5 A bias and 25°C. (c) Wall-plug efficiency of RB-755.
    Lifetime test with one single emitter under CW 12 A bias and 40°C.
    (a) Vertical (fast axis) far-field angular divergence. (b) Horizontal (slow axis) far-field angular divergence.
    Measured natural logarithm of threshold and slope efficiency as functions of absolute temperature. The slope of fitted lines corresponds to the inverse of T0 (blue) and T1 (red), respectively.
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    H. Martin Hu, Jianyang Zhao, Weimin Wang, James Ho, Langxing Kuang, Wenbin Liu. 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser[J]. Chinese Optics Letters, 2019, 17(6): 061403

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 21, 2019

    Accepted: Mar. 14, 2019

    Published Online: Jun. 12, 2019

    The Author Email: Wenbin Liu (liuwenbin@raybowlaser.com)

    DOI:10.3788/COL201917.061403

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