Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

Yan Pei; Wenhao Geng; Lingbo Xu; Can Cui; Xiaodong Pi; Deren Yang; Rong Wang

doi:10.1088/1674-4926/24050011

Journal of Semiconductors, Volume. 45, Issue 11, 112503(2024)

Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting

Yan Pei^1,3, Wenhao Geng^2,3, Lingbo Xu^1,3、*, Can Cui¹, Xiaodong Pi^2,3、**, Deren Yang^2,3, and Rong Wang^2,3、***

¹Zhejiang Key Laboratory of Quantum State Control and Optical Field Manipulation, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

²State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

³Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

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Yan Pei, Wenhao Geng, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang. Demonstration of irradiation-resistant 4H-SiC based photoelectrochemical water splitting[J]. Journal of Semiconductors, 2024, 45(11): 112503

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Paper Information

Category: Research Articles

Received: May. 8, 2024

Accepted: --

Published Online: Dec. 23, 2024

The Author Email: Xu Lingbo (LBXu), Pi Xiaodong (XDPi), Wang Rong (RWang)

DOI:10.1088/1674-4926/24050011

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laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology