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Journal of Semiconductors, Volume. 44, Issue 12, 120501(2023)

Interface engineering yields efficient perovskite light-emitting diodes

Rashid Khan1, Guangyi Shi1, Wenjing Chen1, Zhengguo Xiao1、*, and Liming Ding2、**
Author Affiliations
  • 1Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 2Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
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    (Color online) (a) Fabrication of MAPbI3 films and post-treatments with alkylammonium iodides. (b) Chemical structures for ammonium salts. (c) Surface defects passivation with alkylammonium iodides. (d) XRD profiles for perovskite films before and after post-treatments. (e) PL spectra. Inset: perovskite films under UV light. (f) PLQYext. (g) TRPL analysis for the control and post-treated perovskite films.

    Fig. 1. (Color online) (a) Fabrication of MAPbI3 films and post-treatments with alkylammonium iodides. (b) Chemical structures for ammonium salts. (c) Surface defects passivation with alkylammonium iodides. (d) XRD profiles for perovskite films before and after post-treatments. (e) PL spectra. Inset: perovskite films under UV light. (f) PLQYext. (g) TRPL analysis for the control and post-treated perovskite films.

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    (Color online) (a) The device structure. (b) EQE statistics for PeLEDs with post-treated films by using DAI solutions with different concentrations. (c) J−V curves. (d) EQE vs current density curves. (e) EQE statistics. (f) EL spectra for PeLEDs without and with post-treatments.

    Fig. 2. (Color online) (a) The device structure. (b) EQE statistics for PeLEDs with post-treated films by using DAI solutions with different concentrations. (c) J−V curves. (d) EQE vs current density curves. (e) EQE statistics. (f) EL spectra for PeLEDs without and with post-treatments.

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    Rashid Khan, Guangyi Shi, Wenjing Chen, Zhengguo Xiao, Liming Ding. Interface engineering yields efficient perovskite light-emitting diodes[J]. Journal of Semiconductors, 2023, 44(12): 120501

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    Paper Information

    Category: Articles

    Received: Oct. 17, 2023

    Accepted: --

    Published Online: Mar. 13, 2024

    The Author Email: Xiao Zhengguo (ZGXiao), Ding Liming (LMDing)

    DOI:10.1088/1674-4926/44/12/120501

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology