Acta Photonica Sinica, Volume. 48, Issue 12, 1248001(2019)

An TFET Photodetector with High Responsivity Based on SOI: Design and Simulation

Xue-fei WANG1...1, Sheng XIE1,1,*, Lu-hong MAO2,2, Xu-fei WANG1,1, and Yong-chao DU11 |Show fewer author(s)
Author Affiliations
  • 1Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin 300072, China
  • 2School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China
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    References(15)

    [1] [1] CARTER R, MAZURIER J, PIRRO L, et al. 22 nm FDSOI technology f emerging mobile, interofthings, RF applications[C]. IEEE International Electron Devices Meeting (IEDM), IEEE, 2016: 221224.https:www.researchgate.publication313449601_22nm_FDSOI_technology_f_emerging_mobile_InterofThings__RF_applications

    [2] [2] ASTHANA V, KAR M, JIMENEZ J, et al. Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FDSOI technology using backgate bias control[C]. ESSCIRC, 2013: 415418.https:www.researchgate.publication261120321_Circuit_optimization_of_4T_6T_8T_10T_SRAM_bitcells_in_28nm_UTBB_FDSOI_technology_using_backgate_bias_control

    [3] [3] KADURA L, GRENOUILLENT L, BEDECARRATS T, et al. Extending the functionality of FDSOI N PFETs to light sensing[C]..IEEE Electron Devices Meeting (IEDM), 2017: 818821.https:www.researchgate.publication313452832_Extending_the_functionality_of_FDSOI_N__PFETs_to_light_sensing

    [4] [4] VEIRANO F, NAVINER L, SIVEIRA F. Pushing minimum energy limits by optimal asymmetrical back plane biasing in 28 nm UTBB FDSOI[C]. International Wkshop on Power & Timing Modeling, 2017: 243249.https:www.researchgate.publication313122199_Pushing_minimum_energy_limits_by_optimal_asymmetrical_back_plane_biasing_in_28_nm_UTBB_FDSOI

    [8] [8] ASTHANA V, KAR M, JLMENE J, et al. Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28 nm VTBB FDSOI technology using backgate bias control[C]. ESSCIRC, 2013: 415418.https:www.researchgate.publication261120321_Circuit_optimization_of_4T_6T_8T_10T_SRAM_bitcells_in_28nm_UTBB_FDSOI_technology_using_backgate_bias_control

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    Xue-fei WANG, Sheng XIE, Lu-hong MAO, Xu-fei WANG, Yong-chao DU. An TFET Photodetector with High Responsivity Based on SOI: Design and Simulation[J]. Acta Photonica Sinica, 2019, 48(12): 1248001

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    Paper Information

    Received: Aug. 27, 2019

    Accepted: Oct. 18, 2019

    Published Online: Mar. 17, 2020

    The Author Email: XIE Sheng (xie_sheng06@tju.edu.cn)

    DOI:10.3788/gzxb20194812.1248001

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