Acta Photonica Sinica, Volume. 48, Issue 12, 1248001(2019)

An TFET Photodetector with High Responsivity Based on SOI: Design and Simulation

Xue-fei WANG1...1, Sheng XIE1,1,*, Lu-hong MAO2,2, Xu-fei WANG1,1, and Yong-chao DU11 |Show fewer author(s)
Author Affiliations
  • 1Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin 300072, China
  • 2School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China
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    Figures & Tables(10)
    Schematic diagram of SOI TFET photodetector
    Energy band of TFET photodetector
    Effects of BOX on the output characteristic of photodetector
    Effects of n+ pocket on the output characteristic of photodetector
    Photodiode reverse bias voltage impact on photodetector
    Variation of P region potential with light intensity
    Energy band diagram of the photodetector
    Output characteristic of photodetector
    Drain current and responsivity of photodetector under different light intensity
    • Table 1. Simulation parameters of photodetector

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      Table 1. Simulation parameters of photodetector

      RegionDoping/cm-3Depth/nm
      Source1×1020100
      Channel1×1017100
      Drain5×1018100
      P1×101750
      N1×101850
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    Xue-fei WANG, Sheng XIE, Lu-hong MAO, Xu-fei WANG, Yong-chao DU. An TFET Photodetector with High Responsivity Based on SOI: Design and Simulation[J]. Acta Photonica Sinica, 2019, 48(12): 1248001

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    Paper Information

    Received: Aug. 27, 2019

    Accepted: Oct. 18, 2019

    Published Online: Mar. 17, 2020

    The Author Email: XIE Sheng (xie_sheng06@tju.edu.cn)

    DOI:10.3788/gzxb20194812.1248001

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