Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature

Rui Huang; Zhiyong Wang; Hui Li; Qing Wang; Yecai Guo

doi:10.1088/1674-4926/44/5/052102

Journal of Semiconductors, Volume. 44, Issue 5, 052102(2023)

Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature

Rui Huang^1、*, Zhiyong Wang², Hui Li¹, Qing Wang¹, and Yecai Guo¹

Author Affiliations

¹School of Electronic and Information Engineering, Wuxi University, Wuxi 214105, China

²Institute of Advanced Technology on Semiconductor Optics & Electronics, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

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References(31)

[1] M Bruel. Silicon on insulator material technology. Electron Lett, 31, 1201(1995).

[2] Q Y Tong, U M Gösele. Wafer bonding and layer splitting for microsystems. Adv Mater, 11, 1409(1999).

[3] R Singh, I Radu, R Scholz et al. Investigation of helium implantation induced blistering in InP. J Lumin, 121, 379(2006).

[4] J Lin, T You, M Wang et al. Efficient ion-slicing of InP thin film for Si-based hetero-integration. Nanotechnology, 29, 504002(2018).

[5] X Hebras, P Nguyen, K K Bourdelle et al. Comparison of platelet formation in hydrogen and helium-implanted silicon. Nucl Instruments Methods Phys Res Sect B, 262, 24(2007).

[6] N Cherkashin, N Daghbouj, F X Darras et al. Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy. J Appl Phys, 118, 245301(2015).

[7] S Personnic, K K Bourdelle, F Letertre et al. Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001). J Appl Phys, 103, 023508(2008).

[8] N Cherkashin, N Daghbouj, G Seine et al. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon. J Appl Phys, 123, 161556(2018).

[9] N Daghbouj, N Cherkashin, A Claverie. A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon. Microelectron Eng, 190, 54(2018).

[10] N Daghbouj, N Cherkashin, F X Darras et al. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon. J Appl Phys, 119, 135308(2016).

[11] M Nastasi, T Höchbauer, J K Lee et al. Nucleation and growth of platelets in hydrogen-ion-implanted silicon. Appl Phys Lett, 86, 154102(2005).

[12] N Cherkashin, F X Darras, P Pochet et al. Modelling of point defect complex formation and its application to H+ ion implanted silicon. Acta Mater, 99, 187(2015).

[13] M K Weldon. On the mechanism of the hydrogen-induced exfoliation of silicon. J Vac Sci Technol B, Microelectron Nanom Struct, 15, 1065(1997).

[14] S Reboh, A De Mattos, J F Barbot et al. Localized exfoliation versus delamination in H and He coimplanted (001) Si. J Appl Phys, 105, 093528(2009).

[15] I Radu, I Szafraniak, R Scholz et al. GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding. J Appl Phys, 94, 7820(2003).

[16] G Gawlik, J Jagielski, B Piatkowski. GaAs on Si: Towards a low-temperature “smart-cut” technology. Vacuum, 70, 103(2003).

[17] A Giguère, N Desrosiers, B Terreault. Blistering effects of low energy hydrogen and helium ions implanted in GaAs(100) crystals. Nucl Instruments Methods Phys Res Sect B, 242, 620(2006).

[18] H J Woo, H W Choi, G D Kim et al. Blistering/exfoliation kinetics of GaAs by hydrogen and helium implantations. Surf Coatings Technol, 203, 2370(2009).

[19] J Sun, J Lin, T Jin et al. Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface. Sci China Mater, 22, 211(2022).

[20] C Qian, B Terreault. Blistering of silicon crystals by low keV hydrogen and helium ions. J Appl Phys, 90, 5152(2001).

[21] A Barcz, M Kozubal, R Jakieła et al. Diffusion and impurity segregation in hydrogen-implanted silicon carbide. J Appl Phys, 115, 223710(2014).

[22] B S Li, Z G Wang, H P Zhang. Study of surface blistering in GaN by hydrogen implantation at elevated temperatures. Thin Solid Films, 590, 64(2015).

[24] N Daghbouj, J Lin, H S Sen et al. Blister formation in He-H co-implanted InP: A comprehensive atomistic study. Appl Surf Sci, 552, 149426(2021).

[25] Z Cevher, P A Folkes, H S Hier et al. Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures. J Appl Phys, 123, 161512(2017).

[26] J Jiménez, E Martín, A C Prieto. Raman microprobe: a non-destructive tool for studying local misorientations in GaAs. Mater Lett, 12, 132(1991).

[27] T A Gant, H Shen, J R Flemish et al. Raman study of low growth temperature GaAs. Appl Phys Lett, 60, 12(1992).

[28] P S Pizani, F Lanciotti, R G Jasinevicius et al. Raman characterization of structural disorder and residual strains in micromachined GaAs. J Appl Phys, 87, 1280(2000).

[29] N Chandrasekaran, T Soga, T Jimbo. GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding. Appl Phys Lett, 82, 22(2003).

[30] S Frabboni, F Corni, C Nobili et al. Nanovoid formation in helium-implanted single-crystal silicon studied byin situ techniques. Phys Rev B, 69, 165209(2004).

[31] J H Evans. Mechanisms of void coarsening in helium implanted silicon. Nucl Instruments Methods Phys Res Sect B, 196, 1(2002).

[32] R R Collino, B B Dick, F Naab et al. Blister formation in ion-implanted GaAs: Role of diffusivity. Appl Phys Lett, 95, 111912(2009).

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Rui Huang, Zhiyong Wang, Hui Li, Qing Wang, Yecai Guo. Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature[J]. Journal of Semiconductors, 2023, 44(5): 052102

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Paper Information

Category: Articles

Received: Dec. 11, 2022

Accepted: --

Published Online: Jun. 15, 2023

The Author Email: Huang Rui (ruihuang@cwxu.edu.cn)

DOI:10.1088/1674-4926/44/5/052102

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology