Fig. 1. (Color online) Distribution of concentration and implantation damage with depth in GaAs crystal implanted with different fluences of H and He ions.

Fig. 2. (Color online) Raman spectrum of four groups of samples before and after implantation and after annealing at 200 °C, (a) sample a, (b) sample b, (c) sample c, (d) sample d.

Fig. 3. Optical microscope images at (a) before annealing, (b) 150 °C, (c) 200 °C and (d) 250 °C annealing for 1 h.

Fig. 4. (Color online) (a–d) AFM images of four groups of samples a, b, c, and d annealed at 200 °C for 1 h. (e, f) are Measurement diagrams of blister height and crater depth on the surface.

Fig. 5. (Color online) Cross-sectional TEM image of sample b after ion implantation without annealing treatment.

Fig. 6. Cross-sectional TEM images of sample b after annealing. (a), (b), (c), (d) and (e) are cross-section TEM images annealed at 200 °C for 1 h and (f) is cross-section TEM image annealed at 250 °C for 1 h.

Fig. 7. (Color online) Distribution of vacancy concentration induced by H and He ion implantation in GaAs.