Journal of Inorganic Materials, Volume. 39, Issue 1, 17(2024)
Figures & Tables(18)
![Package interconnection structure of typical power semiconductor module[14]](/Images/icon/loading.gif){kind=icon}
3. Package interconnection structure of typical power semiconductor module[14]
4. Applied temperature range and application possibilities of different package interconnect materials[22]
8. Structures of micro-nano copper particles mixed with different particle sizes[90]
9. Schematic diagram of sintering of bimodal copper slurry under different atmospheres[93]
10. Schematic diagram of oxidation effect of surface layer of copper nanoparticles on the sintering performance[94]
11. Mechanism of promotion in copper slurry by ascorbic acid (AA)[96]
12. Schematic diagram of reduction and sintering mechanism of Cu NP paste[98]
13. SEM images of cross sections of sintered specimens at different temperatures[102]
14. Resistivities of the bonding layer at different sintering temperatures[103]
15. Schematic diagram of the preparation process of Cu-Cu connection joints[104]
Table 1. Comparison on performance parameters of the main semiconductor material [10]
View tableView in ArticleTable 1. Comparison on performance parameters of the main semiconductor material [10]
Parameter Si GaAs SiC GaN Diamond Band gap/eV 1.12 1.43 3.26 3.45 5.45 Dielectric constant 11.9 13.1 10.1 9 5.5 Breakdown field/ (kV·cm-1) 300 400 2200 2000 10000 Electron mobility/(cm2·V-1·s-1) 1500 8500 1000 1250 2200 Hole mobility/ (cm2·V-1·s-1） 600 400 115 850 850 Thermal conductivity/ (W·cm-1·K-1) 1.5 0.46 4.9 1.3 22 Electron saturation drift velocity/(×107, cm·s-1) 1 1 2 2.2 2.7
Table 2. Various TLP bonding materials and their properties[60]
View tableView in ArticleTable 2. Various TLP bonding materials and their properties[60]
Material Temperature/℃ Relative market price* Relative performance Bonding IMC Thermal conductivity Electrical conductivity Cu-Sn 280 415(Cu6Sn5) Cu: 0.5 Cu: 4.4 Cu: 4.1 676(Cu3Sn) Sn: 0.8 Ni-Sn 300 800(Ni3Sn3) Ni: 1 Ni: 1 Ni: 1 Sn: 0.8 Au-Sn 250 419(AuSn) Au: 2600 Au: 3.5 Au: 3.1 Sn: 0.8 Ag-Sn 250 480(Ag3Sn) Ag: 63 Ag: 4.7 Ag: 4.4 Sn: 0.8 Ag-In 200 495 Ag: 63 Ag: 4.7 Ag: 4.7 In: 37.5 Au-In 175 880 Au: 2600 Au: 3.1 Au: 3.1 In: 37.5
Table 3. Comparison of various low-temperature sintering processes and their performance
View tableView in ArticleTable 3. Comparison of various low-temperature sintering processes and their performance
Particle size Appearance Sintering process Electrical conductivity/ (μΩ·cm) Shearing performance/ MPa Ref. 10 and 1000 nm particle compound Irregular Ar, 250 ℃, 2 MPa, 15 min 5.44 45.6 [ 90 ]200 nm, 1000 nm Spherical N2, 350 ℃, 0.4 MPa - 40 [ 91 ]530 nm Irregular 97% N2-3% H2, 300 ℃, 30 min - 23 [ 92 ]60-100 nm Angular N2, 200 ℃, 60 min 18 - [ 9 3]Thick 200 nm, length 3-5 μm Spherical N2, 275 ℃, 10 MPa, 30 min - 50 [ 95 ]30-400 nm Angular N2, 300 ℃, 0.4 MPa, 30 min - 24.8 [ 96 ]6.5 nm Spherical Ar, 250 ℃, 5 MPa, 30 min - 36.2 [ 97 ]100 nm Spherical Air, 225 ℃, 8 MPa, 10 min 59±7 28.7±1.6 [ 98 ]500 nm Angular HCOOH, 275 ℃, 5 MPa, 30 min - 70 [ 102 ]60.5 nm Spherical 95% Ar-5% H2, 300 ℃, 1.08 MPa, 60 min 11.2 31.88 [ 103 ]30 nm Spherical 95% N2-5% H2, 320 ℃, 10 MPa, 5 min 3.16 51.7 [ 104 ]54-64 nm Sphere-like H2, 400 ℃, 1.2 MPa, 5 min - 37.7 [ 106 ]5 nm Sphere-like 95% Ar-5% H2, 250 ℃, 1.08 MPa, 60 min 4.1 25.36 [ 107 ]400-1200 nm Sphere-like Air, 200 ℃, 50 s 54±2 - [ 108 ]300-400 nm Sphere-like N2, 200 ℃, 30 min 139±24 - [ 109 ]1-3 μm Sphere-like Air, 180 ℃, 5 min 30 - [ 110 ]200 nm Spherical Air, 300 ℃, 2 MPa, 1 min - 21.8 [ 111 ]50 nm Spherical Air, 220 ℃, 5 min - 30 [ 112 ]10 nm Spherical N2, 200 ℃, 30 min 14.0±4.5 - [ 113 ]6.5 nm Spherical Air, 175 ℃, 2 MPa, 10 min - 35.1 [ 114 ]60 nm Sphere-like 95% Ar-5% H2, 250 ℃, 10 MPa, 60 min - 32.4 [ 115 ]4.4 nm Angular N2, 150 ℃, 30 min 52 - [ 116 ]Tens to hundreds of nanometers Irregular Vacuum, 300 ℃, 0.4 MPa,30 min - 20 [ 117 ]<10 nm Angular Ar, 250 ℃, 3 MPa, 30 min 5.1 - [ 118 ]
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Xin KE, Bingqing XIE, Zhong WANG, Jingguo ZHANG, Jianwei WANG, Zhanrong LI, Huijun HE, Limin WANG.
Paper Information
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Received: Aug. 1, 2023
Accepted: --
Published Online: Mar. 28, 2024
The Author Email: WANG Zhong (wzwz99@126.com)
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