Infrared and Laser Engineering, Volume. 44, Issue 2, 461(2015)

Damage characteristics of polysilicon under wavelengths of 1 064 nm, 532 nm and 355 nm laser irradiation

Feng Aixin1,2,3、*, Zhuang Xuhua2, Xue Wei1, Han Zhenchun2,4, Sun Tietun3, Cheng Fengguo2, Zhong Guoqi2, Yin Cheng2, and He Ye2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    References(8)

    [1] [1] Stuart B C, Feit M D, Herman S, et al. Nanosecond-to-femtosecond laser-induced breakdown in dielectrics [J]. Phys Rev, 1996, B53(4): 749-1761.

    [2] [2] Yuan Yonghua, Liu Songhao. Study of the characteristics of the surface ripple on Si material irradiated by pulsed laser[J]. Acta Optica Sinica, 2004, 24(2): 56-59. (in Chinese)

    [4] [4] Yang Hongdao. Micro/Nano-structures on silicon surface by pulse laser[D]. Chengdu: Southwest University of Science and Technology, 2008. (in Chinese)

    [6] [6] Zhu Yaonan. Discussion of the measurement methods for laser induced damage threshold of optical coating[J]. Laser Technology, 2006, 30(5): 532-536. (in Chinese)

    [8] [8] Riedel D, Hernandez-Pozos J L, Palmer R E, et al. Fabrication of ordered arrays of silicon cones by optical diffraction in ultrafast laser etching with SF6[J]. Appl Surf A, 2004, 78(3): 381-385.

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    Feng Aixin, Zhuang Xuhua, Xue Wei, Han Zhenchun, Sun Tietun, Cheng Fengguo, Zhong Guoqi, Yin Cheng, He Ye. Damage characteristics of polysilicon under wavelengths of 1 064 nm, 532 nm and 355 nm laser irradiation[J]. Infrared and Laser Engineering, 2015, 44(2): 461

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    Paper Information

    Category: 激光与光电子技术应用

    Received: Jun. 7, 2014

    Accepted: Jul. 11, 2014

    Published Online: Jan. 26, 2016

    The Author Email: Aixin Feng (aixfeng@126.com)

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