[3] [3] SONG De, SHI Feng, LI Ye. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate[J]. Infrared and Laser Engineering, 2016, 45(2): 0203002. doi: 10.3788/m0001820164502.203002.

[4] [4] ROBBINS M S, HADWEN B J. The noise performance of electron multiplying charge-coupled devices[J]. IEEE Transactions on electron Device, 2003, 50(5): 1227-1232. doi: 10.1109/TED.2003.813462.

[5] [5] HIRVONEN L M, SUHLING K. Photon counting imaging with an electron-bombarded pixel image sensor[J]. Sensors, 2016, 16(5): 617. doi: 10.3390/s16050617.

[6] [6] NIKZAD S, YU Q M, AIME′E L S, et al. Direct detection and imaging of low-energy electrons with delta-doped charge-coupled devices[J]. Applied Physics Letters, 1998, 73(23): 3417-3419. doi: 10.1063/1.122783.

[9] [9] HOWARD N E. Development of techniques to characterize electron-bombarded charge-coupled devices[D]. Arizona: The University of Arizona, 2002.

[12] [12] SROUR R J, PALKO J W. Displacement damage effects in irradiated semiconductor devices[J]. Transactions on Nuclear Science, 2013, 60(3): 1740-1766. doi: 10.1109/TNS.2013.2261316.

[14] [14] TERMAN L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes[J]. Solid State Electronics, 1962(5): 285-299. doi: 10.1016/0038-1101(62)90111-9.