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Journal of Terahertz Science and Electronic Information Technology , Volume. 22, Issue 12, 1414(2024)

Gain attenuation of CMOS image sensor caused by electron bombardment

YAN Lei1,2, SHI Feng1,2, CHENG Hongchang1,2, MIAO Zhuang1,2, YANG Ye2, FAN Haibo2, HAN Jian2, and JIAO Gangcheng1,2
Author Affiliations
  • 1Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an Shaanxi 710065, China
  • 2Kunming Institute of Physics, Kunming Yunnan 650223, China
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    YAN Lei, SHI Feng, CHENG Hongchang, MIAO Zhuang, YANG Ye, FAN Haibo, HAN Jian, JIAO Gangcheng. Gain attenuation of CMOS image sensor caused by electron bombardment[J]. Journal of Terahertz Science and Electronic Information Technology , 2024, 22(12): 1414

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    Received: May. 22, 2023

    Accepted: Jan. 21, 2025

    Published Online: Jan. 21, 2025

    The Author Email:

    DOI:10.11805/tkyda2023131

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology