Semiconductor Optoelectronics, Volume. 42, Issue 6, 849(2021)
Effect of Oxygen Partial Pressure During Sputtering on Structural and Optical Properties of β-Ga2O3 Thin Films
[1] [1] Li M Q, Yang N, W G G, et al. Highly preferred orientation of Ga2O3 films sputtered on SiC substrates for deep UV photodetector application[J]. Appl. Surf. Sci., 2019, 471(31): 694-702.
[2] [2] Higashiwaki M, Sasaki K, Murakami H, et al. Recent progress in Ga2O3 power devices[J]. Semicond. Sci. Technol., 2016, 31(3): 034001.
[3] [3] Roy R, Hill V, Osborn E. Polymorphism of Ga2O3 and the system Ga2O3-H2O[J]. J. Am. Chem. Soc., 1952, 74(3): 719-722.
[4] [4] An Y, Dai L, Wu Y, et al. Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition[J]. J. of Adv. Dielectrics, 2019, 9(4): 1950032.
[6] [6] Dong L, Jia R, Xin B, et al. Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films[J]. J. Vac. Sci. Technol. A, 2016, 34(6): 060602.
[7] [7] Huang L, Feng Q, Han G. Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures[J]. IEEE Photon. J., 2017, 9(4): 1-8.
[8] [8] Shariati M, Choranneviss M, Hosseini H, et al. Effect of annealing temperature on properties of Al-Cu-N thin films deposited by DC magnetron sputtering[J]. Surf. Coat Technol., 2007, 201: 5570-5573.
[9] [9] Ou S, Wuu D, Fu Y, et al. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition[J]. Mater. Chem. Phys., 2012, 133(2): 700-705.
[10] [10] Nakagomi S, Kokubun Y. Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate[J]. J. Cryst. Growth, 2012, 349(1): 12-18.
[12] [12] Vancoppenolle V, Jouan P, Wautelet M, et al. DC magnetron sputtering deposition of TiO2 films in argon-oxygen gas mixtures: Theory and experiments[J]. Surf. and Coat. Technol., 1999, 116-119: 933-937.
[13] [13] Behrisch R. Sputtering by Particle Bombardment Ⅰ[M]. Berlin: Springer, 1981: 145.
[15] [15] Passlack M, Schubert E F, Hobson W S, et al. Ga2O3 films for dielectronic and optoelectronic applications[J]. J. Appl. Phys., 1995, 77(2): 686-693.
[16] [16] Ramachandran K R, Dendooven J, Botterman J. Plasma enhanced atomic layer deposition of Ga2O3 thin films[J]. J. Mater. Chem. A, 2014, 2(45): 19232-19238.
[18] [18] Monroy E, Omnès F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors[J]. Semicond. Sci. Technol., 2003, 18(4): R33-R51.
Get Citation
Copy Citation Text
DONG Bin, HE Chenguang, WANG Changan, LI Qixin, LI Yelin, LIU Ningyang, ZHAO Wei, CHEN Zhitao. Effect of Oxygen Partial Pressure During Sputtering on Structural and Optical Properties of β-Ga2O3 Thin Films[J]. Semiconductor Optoelectronics, 2021, 42(6): 849
Category:
Received: Oct. 22, 2021
Accepted: --
Published Online: Feb. 14, 2022
The Author Email: