Microelectronics, Volume. 54, Issue 2, 293(2024)

Breakdown Simulation Analysis of Asymmetric Resistive Field Plate Field Effect Devices

YAO Chuanjian1...2, XIAO Tian1, LI Xiaoquan1, HE Yue1,2, and TAN Kaizhou12 |Show fewer author(s)
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    References(12)

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    [2] [2] CHEN X. Semiconductor power devices with alternating conductivity type high-voltage breakdown regions [P]. US: 5216275A, 1993-06-01.

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    [4] [4] FUJIHIRA T. Theory of semiconductor superjunction devices [J]. Japanese Journal of Applied Physics,1997, 36(10R): 6254-6262.

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    [6] [6] HUANG M, CHEN X. Theory of an improved vertical power MOSFET using high-k insulator [J].Superlattices and Microstructures, 2015, 88: 244-253.

    [7] [7] LYU X, CHEN X. Vertical power Hk-MOSFET of hexagonal layout [J]. IEEE Transactions on Electron Devices, 2013, 60(5): 1709-1715.

    [8] [8] MATSUSHITA T, AOKI T, OTSU T, et al. Highly reliable high-voltage transistors by use of the SIPOS process [J]. IEEE Transactions on Electron Devices,1976, 23(8): 826-830.

    [9] [9] MUKHERJEE S, CHOU C J, SHAW K, et al. The effects of SIPOS passivation on DC and switching performance of high voltage MOS transistors [C]//International Electron Devices Meeting. Los Angeles,CA, USA. 1986: 646-649.

    [10] [10] CAO Z, DUAN B, GUO H, et al. Novel power UMOSFET with SIPOS pillars [J]. Materials Science in Semiconductor Processing, 2018, 87: 86-91.

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    [12] [12] TAN K, TANG Z, ZHANG X, et al. A novel resistive field plate superjunction like structure simulation study [C] // IEEE International Conference on Electron Devices and Solid-State Circuits. Xi’an,China. 2019: 1-3.

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    YAO Chuanjian, XIAO Tian, LI Xiaoquan, HE Yue, TAN Kaizhou. Breakdown Simulation Analysis of Asymmetric Resistive Field Plate Field Effect Devices[J]. Microelectronics, 2024, 54(2): 293

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    Paper Information

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    Received: Jan. 23, 2024

    Accepted: --

    Published Online: Aug. 21, 2024

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.240120

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