We herein introduce a method for preparing shallow-tapered holes etched on quartz glass. The effects of lithographic and etching parameters (gas flow ,gas composition ,cavity pressure ,ICP power ,and bias power) on the etching properties ,surface profile ,etching rate ,and sidewallinclination ofquartz glass were investigated. The results showed thatthe type of etching gas significantly affected the etching of the shallow cone-hole array on quartz and that the combination ofCF4 andAryielded thebestetching effect. As theCF4 gasflow rateincreased ,the quartzetching angle firstdecreased and then increased slightly. When the CF4 ∶ Argas flow ratiowas5 ∶ 3 ,the quartzetching ratewas0. 154μm/min ,the photoresistetching rate was0. 12μm/min ,and the inclination of the shallow quartz cone hole was the highest. When other etching parameters were applied ,the ICP power increased from 600 to 800W ,the quartz etching rate decreased significantly ,and polymer deposition became the dominant etching process. The roughness (Rq ) of the etched quartz increased with decreasing ICP power. As the RF power increased ,the rate of quartz etching increased ,and the Rq value of the etched quartz first increased and then decreased. When the RF power was increased to 200 W ,photoresist carbonization occurred. This study provides a technical reference for the preparation of quartz- glass microdevices.