Fig. 1. (Color online) Flow chart of the experimental process.

Fig. 2. (Color online) Raman spectra and the corresponding deconvolution peaks of 150 nm silicon film (a) deposited by magnetic sputtering (p:a-Si), (b) annealed directly at 950 °C for 45 min (pPoly film), and (c) annealed with spin-coated ATT at 950 °C for 45 min (ATT-pPoly film). (d) XRD patterns of the three samples.

Fig. 3. (Color online) Effect of ATT on the average grain size (δ). (a) Particle size obtained through log-normal and Gaussian distributions. Inset: a typical SEM image of the annealed polysilicon film; (b) the average grain size δ of pPoly and ATT-pPoly films annealed at 950 °C for 45 min under different sputtering thickness (d).

Fig. 4. (Color online) Electrical properties of the p:poly-Si films vs. deposition thickness (d). (a) Resistivity (ρ), (b) carrier concentration (p^*), and (c) carrier mobility (μ).

Fig. 5. (Color online) Mean sheet resistance (R_sheet,m) and the corresponding standard deviation coefficient (σ) vs. annealing temperature of the samples annealed for 45 min. The silicon films shown in (a) are deposited at a pressure of 0.2 Pa, and the samples in (b) are deposited at 0.5 Pa. The curves in (c) and (d) show uniformity.

Fig. 6. (Color online) Mean sheet resistance (R_sheet,m) and the corresponding standard deviation coefficient (σ) vs. annealing duration at 900 °C. The silicon films shown in (a) are deposited at a pressure of 0.2 Pa and the sample in (b) is deposited at 0.5 Pa. The curves in (c) and (d) show uniformity.

Fig. 7. (Color online) Boron concentration distribution in p:poly-Si films (annealed at 950 °C for 45 min) measured by SIMS.