Journal of the Chinese Ceramic Society, Volume. 52, Issue 7, 2316(2024)
Effect of Different Polysilicon Bonding Layers Doping Concentration on Properties of Separated Absorption Charge Multiplication Ge/Si Avalanche Photodiodes
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SU Xiaoping, LI Jiahui, WANG Zhanren, KE Shaoying. Effect of Different Polysilicon Bonding Layers Doping Concentration on Properties of Separated Absorption Charge Multiplication Ge/Si Avalanche Photodiodes[J]. Journal of the Chinese Ceramic Society, 2024, 52(7): 2316
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Received: Sep. 28, 2023
Accepted: --
Published Online: Aug. 26, 2024
The Author Email: Shaoying KE (syke@mnnu.edu.cn)
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