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Acta Photonica Sinica, Volume. 48, Issue 12, 1248004(2019)

I-V and C-V Characteristics of Graphene/Silicon Photodetector

Xin-yu FANG and Jun CHEN*
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  • School of Electronic and Information Engineering, Soochow University, Suzhou, Jiangsu 215006, China
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    [7] Peng LV, Xiu-juan ZHANG, Xi-wei ZHANG. High-sensitivity and fast-response graphene/crystalline silicon schottky junction-based near-IR photodetectors. IEEE Electron Device Letters, 34, 1337-1339(2013).

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    [10] T STANISLAV, Y ROMAN, G JAN. Electricalcharacterization of graphite/InP schottky diodes by I-V-T and C-V methods. Journal of Electronic Materials, 47, 4950-4954(2018).

    [11] Jiang-hong WU, Zhen-wei YANG, Cai-yu QIU. Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles. Nanoscale, 10, 8023-8030(2018).

    [12] Yao WU, Xin YAN, Xia ZHANG. A monolayer graphene/GaAs nanowire array Schottky junction self-powered photodetector. Applied Physics Letters, 109, 183101(2016).

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    [16] S K CHEUNG, N W CHEUNG. Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied Physics Letters, 49, 85-87(1986).

    [17] D B ANTONIO, L GIUSEPPE, L LAURA. Graphene-silicon schottky diodes for photodetection. IEEE Transactions on Nanotechnology, 17, 1133-1137(2018).

    [18] L GIUSEPPE, G FILIPPO, G LUCA. I-V and C-V characterization of a high-responsivity graphene/silicon photodiode with embedded MOS capacitor. Nano Materials, 7, 158-165(2017).

    [19] S A YERIşKIN, M BALBAşı, i ORAK. Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage (C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors. Materials in Electrons, 28, 7819-7826(2017).

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    Xin-yu FANG, Jun CHEN. I-V and C-V Characteristics of Graphene/Silicon Photodetector[J]. Acta Photonica Sinica, 2019, 48(12): 1248004

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    Paper Information

    Received: Jun. 24, 2019

    Accepted: Aug. 30, 2019

    Published Online: Mar. 17, 2020

    The Author Email: CHEN Jun (junchen@suda.edu.cn)

    DOI:10.3788/gzxb20194812.1248004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
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    laser manufacturing
    Instrumentation, Measurement and Metrology