Fig. 1. Fabrication process of Gr/n-Si Schottky photodetector

Fig. 2. SEM image of Gr film

Fig. 3. Gr/n-Si光电探测器的I-V曲线I-V curves of Gr/n-Si photodetector

Fig. 4. 零偏压时Gr/n-Si肖特基结能带图Energy band diagram of Gr/n-Si Schottky junction at zero bias

Fig. 5. 反向偏压光照下Gr/n-Si光电探测器的结构及能带示意图Structure and energy band diagrams of Gr/n-Si photodetector at reverse bias under illumination

Fig. 6. 在30~800 kHz不同频率下测量的Gr/n-Si肖特基探测器的C-V曲线C-Vcurves of Gr/n-Si photodetector measured at different frequencies from 30~800 kHz

Fig. 7. 光照下考虑SiN_x绝缘层的Gr/n-Si肖特基结能带图Energy band diagram of Gr/n-Si Schottky junction with SiN_x insulator layer under illumination