Infrared and Laser Engineering, Volume. 50, Issue 11, 20210453(2021)

Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons

Shuai Wang1,2, Qin Han1,2,3、*, Han Ye1,2, Liyan Geng1,2, Ziqing Lu1,2, Feng Xiao1,2, and Fan Xiao1,2
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Shuai Wang, Qin Han, Han Ye, Liyan Geng, Ziqing Lu, Feng Xiao, Fan Xiao. Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons[J]. Infrared and Laser Engineering, 2021, 50(11): 20210453

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    Paper Information

    Category: Infrared technology and application

    Received: May. 10, 2021

    Accepted: --

    Published Online: Dec. 7, 2021

    The Author Email: Qin Han (hanqin@semi.ac.cn)

    DOI:10.3788/IRLA20210453

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