Infrared and Laser Engineering, Volume. 50, Issue 11, 20210453(2021)

Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons

Shuai Wang1,2, Qin Han1,2,3、*, Han Ye1,2, Liyan Geng1,2, Ziqing Lu1,2, Feng Xiao1,2, and Fan Xiao1,2
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    References(22)

    [1] K J Bachmann, J L Shay. InGaAs detector for 1.0-1.7-μm wavelength range. Applied Physics Letters, 32, 446-448(1978).

    [2] C Wang, J Wang, Z Xu, et al. Design considerations of InGaAs/InP single-photon avalanche diode for photon-counting communication. Optik, 185, 1134-1145(2019).

    [3] D E Ackley, J Hladky, M J Lange, et al. In0.53Ga0.47As/InP floating guard ring avalanche photodiodes fabricated by double diffusion. IEEE Photonics Technology Letters, 2, 571-573(1990).

    [4] J I Kang, H K Sung, H Kim, et al. Diode quenching for Geiger mode avalanche photodiode. Ieice Electronics Express, 15, 0062(2018).

    [5] S Cova, M Ghioni, A Lacaita, et al. Avalanche photodiodes and quenching circuits for single-photon detection. Applied Optics, 35, 1956-1976(1996).

    [6] [6] Jiang X D, Wilton S, Kudryashov I, et al. InGaAsPInP Geigermode APDbased LiDAR[C]SPIE, 2018: 107290C.

    [7] A Tosi, N Calandri, M Sanzaro, et al. Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode. IEEE Journal of Selected Topics in Quantum Electronics, 20, 192-197(2014).

    [8] X Meng, S Xie, X Zhou, et al. InGaAs/InAlAs single photon avalanche diode for 1550 nm photons. Royal Society Open Science, 3, 150584(2016).

    [9] J Wen, W J Wang, X R Chen, et al. Origin of large dark current increase in InGaAs/InP avalanche photodiode. Journal of Applied Physics, 123, 161530-161530(2018).

    [10] M Zhou, W Wang, H Qu, et al. InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency. Optical and Quantum Electronics, 52, 1-9(2020).

    [11] Y Q Fang, W Chen, T H Ao, et al. InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm. Review of Scientific Instruments, 91, 083102(2020).

    [12] A I Mark, X D Jiang, E Mark, et al. Advances in InGaAsP-based avalanche diode single photon detectors. Journal of Modern Optics, 58, 174-200(2011).

    [13] X Jiang, M Itzler, K O'Donnell, et al. InP-based single-photon detectors and Geiger-mode APD arrays for quantum communications applications. IEEE Journal of Selected Topics in Quantum Electronics, 21, 5-16(2015).

    [14] [14] Itzler M A, Entwistle M, Jiang X, et al. Geigermode APD singlephoton cameras f 3D laser radar imaging[C]IEEE Aerospace Conference, 2014:112.

    [15] Y Liu, S R Forrest, J Hladky, et al. A planar Inp/Ingaas avalanche photodiode with floating guard ring and double diffused junction. Journal of Lightwave Technology, 10, 182-193(1992).

    [16] L J Tan, D S G Ong, J S Ng, et al. Temperature dependence of avalanche breakdown in InP and InAlAs. IEEE Journal of Quantum Electronics, 46, 1153-1157(2010).

    [17] Y L Shi, X Y Yang, H Zeng, et al. InP-based free running mode single photon avalanche photodiode. Infrared and Laser Engineering, 49, 0103005(2020).

    [18] G S Castro, J Andrade, R Damasceno, et al. Remotely gated InGaAs single-photon detector at 1550 nm. IEEE Photonics Technology Letters, 32, 129-131(2020).

    [19] T Haddadifam, M A Karami. Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies. Chinese Physics B, 28, 68502(2019).

    [20] M G Liu, C Hu, X G Bai, et al. High-performance InGaAs/InP single-photon avalanche photodiode. IEEE Journal of Selected Topics in Quantum Electronics, 13, 887-894(2007).

    [21] Zhu Shi, Haizhi Song, Heping Xie, et al. Kong fanlin low dark count rate InGaAsP/InP SPAD infrared and laser engineering. Infrared and Laser Engineering, 46, 1220001(2017).

    [22] J Liu, Y Xu, Z Wang, et al. Reducing afterpulsing in InGaAs(P) single-photon detectors with hybrid quenching. Sensors, 20, 4384(2020).

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    Shuai Wang, Qin Han, Han Ye, Liyan Geng, Ziqing Lu, Feng Xiao, Fan Xiao. Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons[J]. Infrared and Laser Engineering, 2021, 50(11): 20210453

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    Paper Information

    Category: Infrared technology and application

    Received: May. 10, 2021

    Accepted: --

    Published Online: Dec. 7, 2021

    The Author Email: Han Qin (hanqin@semi.ac.cn)

    DOI:10.3788/IRLA20210453

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