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Journal of Semiconductors, Volume. 44, Issue 5, 052101(2023)

Homojunction structure amorphous oxide thin film transistors with ultra-high mobility

Rongkai Lu1, Siqin Li1, Jianguo Lu1,2、*, Bojing Lu1, Ruqi Yang1, Yangdan Lu1, Wenyi Shao1, Yi Zhao3、**, Liping Zhu1,2, Fei Zhuge4, and Zhizhen Ye1,2、***
Author Affiliations
  • 1State Key Laboratory of Silicon Materials, Key Laboratory for Biomedical Engineering of Ministry of Education, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
  • 3Department of Electronic Science and Technology, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
  • 4Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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    Rongkai Lu, Siqin Li, Jianguo Lu, Bojing Lu, Ruqi Yang, Yangdan Lu, Wenyi Shao, Yi Zhao, Liping Zhu, Fei Zhuge, Zhizhen Ye. Homojunction structure amorphous oxide thin film transistors with ultra-high mobility[J]. Journal of Semiconductors, 2023, 44(5): 052101

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    Paper Information

    Category: Articles

    Received: Sep. 29, 2022

    Accepted: --

    Published Online: Jun. 15, 2023

    The Author Email: Lu Jianguo (lujianguo@zju.edu.cn), Zhao Yi (yizhao@zju.edu.cn), Ye Zhizhen (yezz@zju.edu.cn)

    DOI:10.1088/1674-4926/44/5/052101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
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    Instrumentation, Measurement and Metrology