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Journal of Semiconductors, Volume. 44, Issue 5, 052101(2023)

Homojunction structure amorphous oxide thin film transistors with ultra-high mobility

Rongkai Lu1, Siqin Li1, Jianguo Lu1,2、*, Bojing Lu1, Ruqi Yang1, Yangdan Lu1, Wenyi Shao1, Yi Zhao3、**, Liping Zhu1,2, Fei Zhuge4, and Zhizhen Ye1,2、***
Author Affiliations
  • 1State Key Laboratory of Silicon Materials, Key Laboratory for Biomedical Engineering of Ministry of Education, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
  • 3Department of Electronic Science and Technology, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
  • 4Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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    (Color online) HRTEM cross-sectional images of the homojunction layer on a SiO2/Si substrate. (a) Schematic diagram of the TFT device with homojunction amorphous ZnAlSnO active layer. (b) Scale bar, 10 nm, inset: SAED pattern; (c) scale bar, 2 nm. (d, e) Energy dispersive X-ray (EDX) line profile of the homojunction layer.

    Fig. 1. (Color online) HRTEM cross-sectional images of the homojunction layer on a SiO2/Si substrate. (a) Schematic diagram of the TFT device with homojunction amorphous ZnAlSnO active layer. (b) Scale bar, 10 nm, inset: SAED pattern; (c) scale bar, 2 nm. (d, e) Energy dispersive X-ray (EDX) line profile of the homojunction layer.

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    (Color online) XPS spectra of O 1s. (a) ZTO film annealed at 900 °C. (b) ZATO film annealed at 500 °C. (c) ZATO film unannealed. (d) Areal ratios of the three O sub-peaks (OⅠ, OⅡ and OⅢ).

    Fig. 2. (Color online) XPS spectra of O 1s. (a) ZTO film annealed at 900 °C. (b) ZATO film annealed at 500 °C. (c) ZATO film unannealed. (d) Areal ratios of the three O sub-peaks (OⅠ, OⅡ and OⅢ).

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    (Color online) Electrical characteristics of TFTs with different active layers. (a) Output characteristics, (b) transfer curve atVDS = 20 V and (c) the corresponding curve ofIDS1/2 versusVGS of the TFT device constituted by the homojunction layer. (d–f) TFT with uniform ZATO active layer.

    Fig. 3. (Color online) Electrical characteristics of TFTs with different active layers. (a) Output characteristics, (b) transfer curve atVDS = 20 V and (c) the corresponding curve ofIDS1/2 versusVGS of the TFT device constituted by the homojunction layer. (d–f) TFT with uniform ZATO active layer.

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    (Color online) Conduction mechanism through the homojunction layer. (a) Schematic diagram of the carrier conducting path of a traditional TFT with uniform active layer during saturation mode. (b) Carrier transport model of homojunction structured amorphous oxide TFT.

    Fig. 4. (Color online) Conduction mechanism through the homojunction layer. (a) Schematic diagram of the carrier conducting path of a traditional TFT with uniform active layer during saturation mode. (b) Carrier transport model of homojunction structured amorphous oxide TFT.

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    • Table 1. Key electrical parameters of TFT devices with distinct active layer.

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      Table 1. Key electrical parameters of TFT devices with distinct active layer.

      Layer structureIoff (A)Ion/IoffVth (V)μsat (cm2/(V·s))SS (V/dec)
      Homojunction~1.5 × 10-118.53 × 107–1.71113.80.372
      Uniform ZATO~4.9 × 10-106.59 × 105–2.9122.90.896
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    Rongkai Lu, Siqin Li, Jianguo Lu, Bojing Lu, Ruqi Yang, Yangdan Lu, Wenyi Shao, Yi Zhao, Liping Zhu, Fei Zhuge, Zhizhen Ye. Homojunction structure amorphous oxide thin film transistors with ultra-high mobility[J]. Journal of Semiconductors, 2023, 44(5): 052101

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    Paper Information

    Category: Articles

    Received: Sep. 29, 2022

    Accepted: --

    Published Online: Jun. 15, 2023

    The Author Email: Lu Jianguo (lujianguo@zju.edu.cn), Zhao Yi (yizhao@zju.edu.cn), Ye Zhizhen (yezz@zju.edu.cn)

    DOI:10.1088/1674-4926/44/5/052101

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology