Journal of Semiconductors, Volume. 44, Issue 11, 114104(2023)
Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel
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Fig. 1. (Color online) Four-transistor pixel structure of the PPD CIS.
Fig. 2. (Color online) VTG time sequence diagram, semiconductor energy band diagram, and charge trapping effect during charge transfer. (a) Time sequence diagram of VTG during charge transfer. (b) Energy band diagram of the semiconductor in the TG region at VTG-Low. (c) Process of electron capture by interface states in phase Ⅰ. (d) Energy band diagram of the semiconductor in the TG region at VTG-High. (e) Process of electron emission by interface states in phase Ⅲ.
Fig. 3. (Color online) Different trap energy level distributions. (a) 1−8 sets of measured distribution data of Si/SiO2 interface state. (b) 9−16 sets of measured distribution data of Si/SiO2 interface state. (c) 17−24 sets of measured distribution data of Si/SiO2 interface state. (d) 25−32 sets of measured distribution data of Si/SiO2 interface state.
Fig. 4. (Color online) Variations in NTrapped with the mean value E0 under Gaussian and exponential distributions.
Fig. 5. (Color online) Variations in CTE with the mean value E0 under Gaussian and exponential distributions.
Fig. 6. (Color online) Variations in NTrapped with different variances ES under Gaussian and exponential distributions.
Fig. 7. (Color online) Variations in CTE with different variances ES under Gaussian and exponential distributions.
Fig. 8. (Color online) The variations in
Fig. 9. (Color online) The variations in
Table 1. Parameters of the mathematical model.
View tableView in ArticleTable 1. Parameters of the mathematical model.
Parameters Description Value NA Doping concentration of the p-type substrate 1015 cm-3 ND Doping concentration of the n-well 1017 cm-3 NA+ Doping concentration of the top pinning layer 1020 cm-3 NC Effective state density of conduction band 2.8 × 1019 cm-3 vt Thermal velocity 107 cm/s q Unit charge 1.6 × 10-19 C K Boltzmann constant 1.38 × 10-23 J/K T Temperature 300 K LTG Length of the TG 0.7 μm LPPD Length of the pinned photodiode 2 μm ATG Area of the TG 0.7 μm2 tfall Time required for the TG to drop from VTG-High to VTG-Low 1 ns Nmax The coefficient of Gaussian and exponential distribution 5 ×1010 cm−2·eV-1 n Electron density of Si semiconductor 1015 cm-3 Electron capture cross-section 10-15 cm-2
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Xi Lu, Changju Liu, Pinyuan Zhao, Yu Zhang, Bei Li, Zhenzhen Zhang, Jiangtao Xu. Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel[J]. Journal of Semiconductors, 2023, 44(11): 114104
Paper Information
Category: Articles
Received: Aug. 16, 2023
Accepted: --
Published Online: Jan. 3, 2024
The Author Email: Zhang Yu (YZhang), Xu Jiangtao (JTXu)
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