11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Yansheng Hu; Yuangang Wang; Wei Wang; Yuanjie Lv; Hongyu Guo; Zhirong Zhang; Hao Yu; Xubo Song; Xingye zhou; Tingting Han; Shaobo Dun; Hongyu Liu; Aimin Bu; Zhihong Feng

doi:10.1088/1674-4926/45/1/012501

Journal of Semiconductors, Volume. 45, Issue 1, 012501(2024)

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Yansheng Hu^1、†, Yuangang Wang^1、†, Wei Wang, Yuanjie Lv^*, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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References(32)

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Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501

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Paper Information

Category: Articles

Received: Jul. 28, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Lv Yuanjie (YJLv), Feng Zhihong (ZHFeng)

DOI:10.1088/1674-4926/45/1/012501

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