Journal of Semiconductors, Volume. 45, Issue 1, 012501(2024)
11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate
Figures & Tables(6)
Fig. 1. (Color online) (a) Schematic cross-section of the AlGaN/GaN HEMT on a GaN substrate and (b) the SEM image of the Γ-shaped gate.
Fig. 2. (Color online) (a) Static and pulsed current−voltage curves. (b) Double transfer characteristics of the AlGaN/GaN HEMTs on a GaN substrate.
Fig. 3. (Color online) 3-terminal breakdown characteristic of the AlGaN/GaN HEMT on a freestanding GaN substrate.
Fig. 4. (Color online) Small-signal radio frequency performance of the AlGaN/GaN HEMT on a GaN substrate.
Fig. 5. (Color online) Large-signal performance of the AlGaN/GaN HEMTs on a GaN substrate. (a) The CW output power and PAE vs. Vds. (b) The large-signal performance and PAE vs. Pin.
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Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501
Paper Information
Category: Articles
Received: Jul. 28, 2023
Accepted: --
Published Online: Mar. 13, 2024
The Author Email: Lv Yuanjie (YJLv), Feng Zhihong (ZHFeng)
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