Optics and Precision Engineering, Volume. 32, Issue 9, 1360(2024)

Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters

Jian QIAO1,3, Zhenduo WU1, Xinhan PENG2, Yuxuan RAN1, and Jingwei YANG1、*
Author Affiliations
  • 1Guangdong Provincial Key Laboratory of Industrial Intelligent Inspection Technology, Foshan University,Foshan528000,China
  • 2Shenzhen Hymson Laser Intelligent Equipments Co.,Ltd., Shenzhen518000, China
  • 3Ji Hua Laboratory, Foshan528200, China
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    References(22)

    [1] WU T Z, SHER C W, LIN Y et al. Mini-LED and micro-LED: promising candidates for the next generation display technology[J]. Applied Sciences, 8, 1557(2018).

    [2] CHEN H W, LEE J H, LIN B Y et al. Liquid crystal display and organic light-emitting diode display: present status and future perspectives[J]. Light Science & Applications, 7, 17168(2018).

    [3] ZHANG L, CHONG W C et al. Monochromatic active matrix micro-LED micro-displays with >5, 000 dpi pixel density fabricated using monolithic hybrid integration process[J]. SID Symposium Digest of Technical Papers, 49, 333-336(2018).

    [4] LEE H E, CHOI J, LEE S H et al. Monolithic flexible vertical GaN light-emitting diodes for a transparent wireless brain optical stimulator[J]. Advanced Materials, 30(2018).

    [5] KANG S M, LEE H E, WANG H S et al. Self-powered flexible full-color display via dielectric-tuned hybrimer triboelectric nanogenerators[J]. ACS Energy Letters, 6, 4097-4107(2021).

    [6] LEE H E, LEE D, LEE T I et al. Wireless powered wearable micro light-emitting diodes[J]. Nano Energy, 55, 454-462(2019).

    [7] HENRY W, PERCIVAL C. ILED displays: next generation display technology[J]. SID Symposium Digest of Technical Papers, 47, 747-750(2016).

    [8] LIU Y T, LIAO K Y, LIN C L et al. PixeLED display for transparent applications[J]. SID Symposium Digest of Technical Papers, 49, 874-875(2018).

    [9] HENLEY F J. combining engineered EPI growth substrate materials with novel test and mass-transfer equipment to enable MicroLED mass-production[J]. SID Symposium Digest of Technical Papers, 49, 688-691(2018).

    [10] [10] 王伟, 赵甜甜, 刘强, 等. Mini/Micro LED巨量转移技术研究与发展现状[J]. 光学 精密工程, 2023, 31(2): 183-199. doi: 10.37188/ope.20233102.0183WANGW, ZHAOT T, LIUQ, et al. Research and development status of Mini/Micro LED mass transfer technology[J]. Opt. Precision Eng., 2023, 31(2): 183-199.(in Chinese). doi: 10.37188/ope.20233102.0183

    [11] [11] 马玉平, 张遥, 魏超, 等. 飞秒激光抛光CVD金刚石涂层表面[J]. 光学 精密工程, 2019, 27(1): 164-171. doi: 10.3788/ope.20192701.0164MAY P, ZHANGY, WEICH, et al. Surface polishing of CVD diamond coating by femtosecond laser[J]. Opt. Precision Eng., 2019, 27(1): 164-171.(in Chinese). doi: 10.3788/ope.20192701.0164

    [12] ZENG D W, LI K, YUNG K C et al. UV laser micromachining of piezoelectric ceramic using a pulsed Nd: YAG laser[J]. Applied Physics A, 78, 415-421(2004).

    [13] KAMLAGE G, BAUER T, OSTENDORF A et al. Deep drilling of metals by femtosecond laser pulses[J]. Applied Physics A, 77, 307-310(2003).

    [14] CHEN C, ZHANG F, ZHANG Y et al. Single-pulse femtosecond laser ablation of monocrystalline silicon: a modeling and experimental study[J]. Applied Surface Science, 576, 151722(2022).

    [15] MOSER R, DOMKE M, WINTER J et al. Single pulse femtosecond laser ablation of silicon-a comparison between experimental and simulated two-dimensional ablation profiles[J]. Advanced Optical Technologies, 7, 255-264(2018).

    [16] BORN M, WOLF E[M]. Principles of Optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light(1980).

    [17] OZONO K, OBARA M, USUI A et al. High-speed ablation etching of GaN semiconductor using femtosecond laser[J]. Optics Communications, 189, 103-106(2001).

    [18] WANG F F, JIANG L, SUN J Y et al. One-step fabrication method of GaN films for internal quantum efficiency enhancement and their ultrafast mechanism investigation[J]. ACS Applied Materials & Interfaces, 13, 7688-7697(2021).

    [19] [19] 张俊, 张为国. Micro-LED蓝宝石衬底AlN上GaN激光剥离研究[J]. 激光技术, 2023, 47(1): 25-31. doi: 10.7510/jgjs.issn.1001-3806.2023.01.004ZHANGJ, ZHANGW G. Micro-LED laser lift-off research of GaN on AlN of sapphire substrate[J]. Laser Technology, 2023, 47(1): 25-31.(in Chinese). doi: 10.7510/jgjs.issn.1001-3806.2023.01.004

    [20] BONSE J, RUDOLPH P, KRÜGER J et al. Femtosecond pulse laser processing of TiN on silicon[J]. Applied Surface Science, 154/155, 659-663(2000).

    [21] CAI X T, JI C Y, WANG Z et al. Ultrafast processes simulation under femtosecond laser irradiation of Gallium Nitride thin films[J]. Computational Materials Science, 214, 111627(2022).

    [22] LE HARZIC R, BREITLING D, WEIKERT M et al. Ablation comparison with low and high energy densities for Cu and Al with ultra-short laser pulses[J]. Applied Physics A, 80, 1589-1593(2005).

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    Jian QIAO, Zhenduo WU, Xinhan PENG, Yuxuan RAN, Jingwei YANG. Mechanism for laser-induced damage bad chip of Micro-LED and optimization of processing parameters[J]. Optics and Precision Engineering, 2024, 32(9): 1360

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    Paper Information

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    Received: Feb. 2, 2024

    Accepted: --

    Published Online: Jun. 2, 2024

    The Author Email: Jingwei YANG (mejwyang@fosu.edu.cn)

    DOI:10.37188/OPE.20243209.1360

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