[1] E LEE, M R JAMES, K M ANAGNOST et al. Monte Carlo modeling and design of photon energy attenuation layers (PALs) for 10-30x quantum yield enhancement in Si-based hard X-ray detectors. arXiv preprint Instruments, 5, 2-17(2021).

[2] S DANNY. A wafer scale active pixel CMOS image sensor for generic x-ray radiology, 259-267.

[3] E R FOSSUM, D B HONDONGWA. A review of the pinned photodiode for CCD and CMOS image sensors. IEEE Journal of the Electron Devices Society, 2, 33-43(2014).

[4] U KHAN, M SARKAR. Analysis of charge transfer potential barrier in pinned photodiode of CMOS image sensors. IEEE Transactions on Electron Devices, 68, 2770-2777(2021).

[5] J E CARNES, W F KOSONOCKY, E G RAMBERG. Free charge transfer in charge-coupled devices. IEEE Transactions on Electron Devices, 19, 798-808(1972).

[6] Y DAIMON, A M MOHSEN, T C MCGILL. Final stage of the charge-transfer process in charge-coupled devices. IEEE Transactions on Electron Devices, 21, 266-272(1974).

[7] S M HAN, T TAKASAWA, K YASUTOMI et al. A time-of-flight range image sensor with background canceling lock-in pixels based on lateral electric field charge modulation. IEEE Journal of the Electron Devices Society, 3, 267-275(2014).

[8] S DIMITRIJEV. Principles of semiconductor devices. Circuits & Devices Magazine IEEE, 22, 58-59(2011).

[9] H TAKESHITA, T SAWADA, T IIDA et al. High-speed charge transfer pinned-photodiode for a CMOS time-of-flight range image sensor, 7536, 235-243(2010).

[10] K XU. Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems. Journal of Micromechanics and Microengineering, 31, 054001(2021).

[11] V T S DAO, N NGO, A Q NGUYEN et al. An image signal accumulation multi-collection-gate image sensor operating at 25 Mfps with 32× 32 pixels and 1220 in-pixel frame memory. Sensors, 18, 3112(2018).

[12] C JAEHYUK, S JUNGSOON, Dongwu KANG et al. Always-on CMOS image sensor for mobile and wearable devices. IEEE Journal of Solid-State Circuits, 51, 130-140(2015).

[13] Z ESSA, P BOULENC, C TAVERNIER et al. 3D TCAD simulation of advanced cmos image sensors, 187-190(2011).

[14] D STOPPA, L PANCHERI, N MASSARI et al. Time of flight image sensors in 0.18 μm CMOS technology: a comparative overview of different approaches(2011).

[15] T KUNDU, R K JARWAL, D MISRA. Electron transit time enhancement in photodetectors for high speed imaging, 2002, 651-654(2002).

[16] H ALAIBAKHSH, M A KARAMI. A Simulation study of electric field engineering with multi-level pinned photodiodes for fast and complete charge transfer. arXiv preprint Optik, 260, 169054-169058(2022).

[17] R MAHDI, J FINK, B J HOSTICKA. Lateral Drift-field photodetector for high speed 0.35 µm CMOS imaging sensors based on non-uniform lateral doping profile: design, theoretical concepts, and TCAD simulations(2010).

[18] D B HONDONGWA, E R FOSSUM. Drift field implementation in large pinned photodiodes for improved charge transfer speed. IEEE Journal of the Electron Devices Society, 6, 413-419(2018).

[19] J E PARK, S PARK, K CHO et al. 7.9 1/2.74-inch 32Mpixel-prototype CMOS image sensor with 0.64 μm Unit pixels separated by full-depth deep-trench isolation, 64, 122-124(2021).

[20] Y C CHANG, C H LIN, Z R TU et al. 0.8 um color pixels with wave-guiding structures for low optical crosstalk image sensors. Electronic Imaging, 931-935(2021).

[21] W E ALLEY, B J ALDER. Modification of Fick's law. Physical Review Letters, 43, 653(1979).

[22] N COUNIOT, G DE STREEL, F BOTMAN et al. A 65 nm 0.5 V DPS CMOS image sensor with 17 pJ/frame. pixel and 42 dB dynamic range for ultra-low-power SoCs. IEEE Journal of Solid-State Circuits, 50, 2419-2430(2015).

[23] K D STEFANOV, A S CLARKE, J IVORY et al. Design and performance of a pinned photodiode CMOS image sensor using reverse substrate bias. Sensors, 18, 118(2018).

[24] J D BRAY, L W SCHUMANN, T S LOMHEIM. Front-side illuminated CMOS spectral pixel response and modulation transfer function characterization: impact of pixel layout details and pixel depletion volume, 7405, 74050Q(2009).

[25] H F WOLF. Silicon semiconductor data(1969).

[26] C ROSSI, J M SALLESE. Simulation of CMOS APS operation and crosstalk in SPICE with generalized devices. IEEE Journal of the Electron Devices Society, 8, 376-384(2019).