Fig. 1. Schematic of movement process of implanted ions in silicon wafer

Fig. 2. Schematic of ion implantation and diffusion

Fig. 3. One dimensional and two-dimensional simulation results

Fig. 4. The state of the substrate doping region at different times

Fig. 5. General flow of FSI single pixel sensor manufacturing

Fig. 6. Flow of STI manufacturing

Fig. 7. Schematic of lithography mask layout design

Fig. 8. Schematic of pixel three-dimensional structure

Fig. 9. Comparison of transverse doping distribution of gradient doped and uniform doped photodiodes

Fig. 10. Transverse potential distribution in gradient doped photodiode region

Fig. 11. Comparison between grid voltage and readout signal

Fig. 12. Comparison of readout signals with completely depleted collection area