INFRARED, Volume. 42, Issue 12, 1(2021)

ALD Deposition and Energy Dispersive Spectrum Analysis of Al2O3/HfO2 Composite Films on GaAs Substrates with Different Aspect Ratios

Reng WANG1...2,*, Guo-qing XU1,2, Kai-hui CHU1,2, Ning LI1,2, and Xiang-yang LI12 |Show fewer author(s)
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    [2] [2] Billaha M A, Mukul K D. Performance Analysis of IIIV Based Long Wavelength QWIP[J]. IEEE JSAC, 2016, 4(13): 116123.

    [3] [3] WU L F. Atomic-layer-deposited Al2O3 and HfO2 ;;on InAlAs: A Comparative Study of Interfacial and Electrical Characteristics[J]. Chin Phys B, 2016, 25(10): 108101.

    [4] [4] Cao Y Q, Li X, Zhu L, et al. Improved Thermal Stability and Electrical Perperties of Atomic Layer Deposited HfO2/AlN High-k Gate Dielectric Stacks on GaAs[J]. Journal of Vacuum Science & Technology A, 2015, 33: 16.

    [5] [5] Chang P, Lee W C. Passivation of InGaAs Using in Situ Molecular Beam Epitaxy Al and HfAlO/HfO2[J]. Journal of Vacuum Science & Technology B, 2010, 28(3): 911.

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    WANG Reng, XU Guo-qing, CHU Kai-hui, LI Ning, LI Xiang-yang. ALD Deposition and Energy Dispersive Spectrum Analysis of Al2O3/HfO2 Composite Films on GaAs Substrates with Different Aspect Ratios[J]. INFRARED, 2021, 42(12): 1

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    Paper Information

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    Received: Jul. 19, 2021

    Accepted: --

    Published Online: Jan. 10, 2022

    The Author Email: Reng WANG (rwang@mail.sitp.ac.cn)

    DOI:10.3969/j.issn.1672-8785.2021.12.001

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