Acta Optica Sinica, Volume. 30, Issue 10, 2782(2010)
Study on Characteristics and Structures of Amorphous Silicon Nitride Thin Films Applied in Micro-Bolometer
[3] [3] Zhu Pei, Zhu Jianqiang. Influences of the substrate stress on element surface figure in vacuum evaporating deposition[J]. Chinese J. Lasers, 2009, 36(2): 477~479
[4] [4] S. Y. Ren, W. Y. Ching. Electronic structures of β- and α-silicon nitride[J]. Phys. Rev. B, 1981, 23(10): 5454~5463
[5] [5] J. Robertson, M. J. Powell. Gap states in silicon nitride[J]. Appl. Phys. Lett., 1984, 44(4): 415~418
[6] [6] A. Simunek, G. Wiech. Determination of local structure using X-ray emission spectroscopy: hydrogenated α-SiNx and α-SiOx[J]. J. Non-Cryst. Solids, 1995, 192-193: 161~164
[7] [7] E. Bustarret, M. Bensouda, M. C. Habrard. Configurational statistics in α-SixNyHz alloys: A quantitative bonding analysis[J]. Phys. Rev. B, 1988, 38(12): 8171~8184
[8] [8] G. Lucovsky, J. Yang, S. S. Chao et al.. Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films[J]. Phys. Rev. B, 1983, 28(6): 3225~3233
[9] [9] G. Scardera, T. Puzzer, G. Conibeer et al.. Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films[J]. J. Appl. Phys., 2008, 104(10): 104310
[10] [10] K. C. Lin, S. C. Lee, The structural and optical properties of α-SiNxH prepared by plasma-enhanced chemical-vapor deposition[J]. J. Appl. Phys., 1992, 72(11): 5474~5483
[11] [11] J. Bandet, B. Despax, M. Caumont. Nitrogen bonding environments and local order in hydrogenated amorphous silicon nitride films studied by Raman spectroscopy[J]. J. Appl. Phys., 1999, 85(11): 7899~7904
[12] [12] R. Carius, K. Jahn, W. Siebert et al.. Photoluminescence in amorphous alloys: α-SiOxH, α-SiNxH, α-SixC1-xH[J]. J. Lumin., 1984, 31-32: 354~356
[13] [13] J. M. Lopez Villegas, B. Garrido, M. S. Benrakkad. Percolation behavior in the electrical characteristics of hydrogenated amorphous silicon nitride films[J]. Mater. Res. Soc., 1992, 258: 655~660
[14] [14] G. G. Stoney. The tension of metallic films deposited by electrolysis[J]. Proc. R. Soc. London, Ser. A, 1909, 82: 172~175
[15] [15] Yu Ying, Luo Zongzi, Weng Xinqiao. Study on the stress of silicon nitride thin films prepared by PECVD[C]. SPIE, 2004, 5774: 212~215
[16] [16] P. K. Bhan, R. Ashokan. Fourier transform infrared study of thermally grown SiO2 in the presence of 1,1,1, trichloroethane[J]. J. Appl. Phys., 1992, 71(5): 2387~2392
[17] [17] W. A. Lanford, M. J. Rand. The hydrogen content of plasma-deposited silicon nitrides[J]. J. Appl. Phys., 1978, 49(4): 2473~2477
[18] [18] D. Jousse, J. Kanicki, J. H. Stathis. Observation of multiple silicon dangling bond configurations in silicon nitride[J]. Appl. Phys. Lett., 1989, 54(11): 1043~1045
[19] [19] Martin T. K. Soh, N. Savvides, A. Charles et al.. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films[J]. J. Appl. Phys., 2005, 97(9): 093714
[20] [20] Z. Yin, F. W. Smith. Optical dielectric and infrared absorption of hydrogenated amorphous silicon nitride films: experimental results and effective-medium-approximation analysis[J]. Phys. Rev. B, 1990, 42(6): 3666~3675
Get Citation
Copy Citation Text
Zhou Dong, Xu Xiangdong, Wang Zhi, Wang Xiaomei, Jiang Yadong. Study on Characteristics and Structures of Amorphous Silicon Nitride Thin Films Applied in Micro-Bolometer[J]. Acta Optica Sinica, 2010, 30(10): 2782
Category: Physical Optics
Received: Jun. 12, 2010
Accepted: --
Published Online: Oct. 24, 2012
The Author Email: Dong Zhou (zduestc@163.com)