<trans-title xml:lang="en">Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger</trans-title>

Hao WANG; Xuechao LIU; Zhong ZHENG; Xiuhong PAN; Jintao XU; Xinfeng ZHU; Kun CHEN; Weijie DENG; Meibo TANG; Hui GUO; Pan GAO

doi:10.15541/jim20240136

Journal of Inorganic Materials, Volume. 39, Issue 9, 1070(2024)

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Hao WANG1...2, Xuechao LIU1,*, Zhong ZHENG3, Xiuhong PAN1, Jintao XU1, Xinfeng ZHU1,2, Kun CHEN1, Weijie DENG1, Meibo TANG1, Hui GUO3 and Pan GAO4 |Show fewer author(s)

Author Affiliations

¹1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201889, China

²2. University of Chinese Academy of Sciences, Beijing 100049, China

³3. School of Microelectronics, Xidian University, Xi’an 710071, China

⁴4. School of Material Science, Shanghai Dianji University, Shanghai 201306, China

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Figures & Tables(10)

1. Basic fabrication flowchart of SiC PCSS

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2. Diagrams of SiC PCSS electrodes components(a) Au/TiW/Ni/SiC; (b) Au/TiW/BGZO/SiC

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3. Schematic diagram of PCSS testing circuit

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4. Comparison of on-state resistance of SiC1_Ni and SiC2_Ni PCSS by FSI and BSI single trigger

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5. Electrode damage microscope images of SiC2_Ni PCSS after FSI and BSI single trigger tests(a) Anode FSI; (b) Cathode FSI; (c) Cathode BSI; (d) Anode BSI

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6. Output peak voltage plots of SiC PCSSs by multiple triggers(a) SiC1_Ni; (b) SiC2_Ni; (c) SiC1_BGZO; (d) SiC2_BGZO

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7. SEM images of SiC1_Ni PCSS damage after multiple triggers tests(a) Cathode; (b) Anode

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8. Microscope images on electrode damage of SiC1_BGZO PCSS after trigger tests(a) Cathode and (b) anode after a single trigger test; (c) Cathode and (d) anode after multiple triggers

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Table 1.
GDMS results of SiC1 and SiC2
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Table 1.
GDMS results of SiC1 and SiC2
Element SiC1/(μg·g^-1) SiC2/(μg·g^-1)
B 3.2 3.0
Al 41 22
V <0.05 <0.05

Table 2.
EDS results of SiC1_Ni PCSS
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Table 2.
EDS results of SiC1_Ni PCSS
Element Residual metal/(%, in atom) Ablation/(%, in atom)
C 53.41 55.91
O BDL 1.31
Si 13.85 42.42
Ti 2.03 BDL
Ni 11.14 0.25
W 7.41 BDL
Au 12.17 0.10

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Hao WANG, Xuechao LIU, Zhong ZHENG, Xiuhong PAN, Jintao XU, Xinfeng ZHU, Kun CHEN, Weijie DENG, Meibo TANG, Hui GUO, Pan GAO. Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger[J]. Journal of Inorganic Materials, 2024, 39(9): 1070

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