Chinese Journal of Quantum Electronics, Volume. 23, Issue 2, 222(2006)

Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING*... jun LI Jian, Jun DENG, Jun HAN, Hong-xing GAI and Guang-di SHENG |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    References(5)

    [1] [1] Madjid H,Metzger R A,et al. Stability of beryllium-doped compositionally graded and abrupt AlInAs/GaInAs heterojunction bipolat transistors [J].Appl. Phys. Lett.,1993,63(1): 93-95.

    [2] [2] Ren F,Fullowan T R,Lothian J,et al. Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors [J].Appl. Phys. Lett.,1991,59(27): 3613-3615.

    [3] [3] Malik R J,Nottenberg R N,Schubert E F,et al. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament [J].Appl. Phys. Lett.,1998,53(26): 2661-2663.

    [4] [4] Kobayashi N,Makimoto T,Horikoshi Y. Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy [J].Appl. Phys. Lett.,1987,50(20): 1435-1437.

    [5] [5] Kim Seong-ll,Kim Moosung,Min SukKi,et al. Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grow by low-pressure metalorganic chemical vapor deposition [J].Appl. Phys.,1993,74:6128.

    Tools

    Get Citation

    Copy Citation Text

    XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 1, 2004

    Accepted: --

    Published Online: Jun. 7, 2010

    The Author Email: Yan-hui XING (xingyanhui@bjut.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics