Chinese Journal of Quantum Electronics, Volume. 23, Issue 2, 222(2006)
Carbon doped GaAs epitaxial layer grown by MOCVD
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XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222
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Received: Nov. 1, 2004
Accepted: --
Published Online: Jun. 7, 2010
The Author Email: Yan-hui XING (xingyanhui@bjut.edu.cn)
CSTR:32186.14.
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