Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING; jun LI Jian; Jun DENG; Jun HAN; Hong-xing GAI; Guang-di SHENG

Chinese Journal of Quantum Electronics, Volume. 23, Issue 2, 222(2006)

Yan-hui XING*... jun LI Jian, Jun DENG, Jun HAN, Hong-xing GAI and Guang-di SHENG |Show fewer author(s)

Author Affiliations

[in Chinese]

show less

Abstract Get PDF(in Chinese)

The GaAs epitaxial layers of various dopant concentration are grown with CCl₄as the doping source by the EMCORE D125 MOCVD system. The C-doped GaAs optical properties are studied by PL,DC XRD. With C dopant concentration increase,band gap shrink,FWHM of PL increase,and lattice constant decrease.

Keywords

DC XRD GaAs doping optelectronics PL spectra

Tools

Get Citation

Copy Citation Text

XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites