Aldoped ZnO (AZO) thin films were deposited on quartz glass by RF magnetron sputtering at room temperature with controlled working pressure, power and deposition time. The effects of three processing conditions on the microstructure and photoelectric properties of AZO thin films were investigated. After annealing at 500℃, all AZO films have hexagonal wurtzite structure and excellent transparency. The average transmittance of AZO films in visible light range is above 86%. At a pressure of 0.25Pa with the power of 200W, the resistivity of the thin film deposited for 10min is as low as 5.04×10-3Ω·cm, while the best performance index is 0.314×10-3Ω-1 for 15min. The results show that the crystal structure, square resistance and transmittance of AZO films prepared by magnetron sputtering are closely related to the working pressure, power and time during the preparation process, and the performance indexes can guide the optimization of AZO films preparation.