Infrared and Laser Engineering, Volume. 51, Issue 5, 20210979(2022)

Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions

Jinchuan Dan1... Shaoyang Tan2, Bangguo Wang1, Yao Xiao1, Guoliang Deng1, and Jun Wang12 |Show fewer author(s)
Author Affiliations
  • 1College of Electronic Information, Sichuan University, Chengdu 610065, China
  • 2Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, China
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    References(14)

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    [2] Z Y Wen, J J Li, H K et Cao. al. Research progress in high power cascade lasers with tunnel junctions. Optoelectronics, 8, 149-157(2018).

    [3] L H Chen, G W Yang, Y X Liu. Development of semiconductor lasers. Chinese Journal of Lasers, 47, 0500001(2020).

    [4] D A Vinokurov, V P Konyaev, M A Ladugin, et al. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD. Semiconductors, 44, 238-242(2010).

    [5] J D Hou, C Xiong, Q Qi, et al. Optimization design of epitaxially-stacked multiple-active-region lasers. Acta Optica Sinica, 38, 1014001(2018).

    [6] [6] Qiu Y, Xie Y , Wang W, et al. Ultrahighpower highefficiency 905 nm pulsed laser f LiDAR[C]2019 IEEE 4th Optoelectronics Global Conference (OGC). IEEE, 2019.

    [7] X Wang, P Crμmp, H Wenzel, et al. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers. IEEE Journal of Quantμm Electronics, 46, 658-665(2010).

    [8] H Wenzel, P Crμmp, A Pietrzak, et al. Theoretical and experimental investigations of the limits to the maximμm output power of laser diodes. New Journal of Physics, 12, 085007(2010).

    [9] P Joachim, Z M Li. What causes the pulse power saturation of gas-based broad-area lasers?. IEEE Photonics Technology Letters, 30, 963-966(2018).

    [10] J Piprek. On the reliability of pulse power saturation models for broad-area GaAs-based lasers. Optical and Quantμm Electronics, 51, 60(2019).

    [11] H Wenzel, A Maaßdorf, C Zink, et al. Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions. Electronics Letters, 16, 445-447(2021).

    [12] M R Gokhale, J C Dries, P V Studenkov, et al. High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy. IEEE Journal of Quantμm Electronics, 33, 2266-2276(1997).

    [13] Y X Man, L Zhong, X Y Ma, . et al. 975 nm semiconductor lasers with ultra-low internal optical loss. Acta Optica Sinica, 40, 5(2020).

    [14] Y Gou, J Wang, Y Cheng, et al. Experimental and modeling study on the high-performance p++-GaAs/n++-GaAs tunnel junctions with silicon and telluriμm co-doped InGaAs quantμm well inserted. Crystals, 10, 1092(2020).

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    Jinchuan Dan, Shaoyang Tan, Bangguo Wang, Yao Xiao, Guoliang Deng, Jun Wang. Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions[J]. Infrared and Laser Engineering, 2022, 51(5): 20210979

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    Paper Information

    Category: Lasers & Laser optics

    Received: Dec. 17, 2021

    Accepted: Mar. 3, 2022

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.3788/IRLA20210979

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