Infrared and Laser Engineering, Volume. 51, Issue 5, 20210979(2022)
Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions
Fig. 1. Schematic diagram of basic waveguide structure.
Fig. 2. (a) Effect of different waveguide structures on the limiting factor; (b) Effect of different waveguide structures on the threshold gain ratio
Fig. 3. Effect of different waveguide structures on slope efficiency
Fig. 4. (a)
Fig. 5. (a)
Fig. 6. (a)
Fig. 7. Variation trend of far-field divergence angle of semiconductor lasers with riple-active regions under different threshold gain ratios; measured (black), simulated (red)
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Jinchuan Dan, Shaoyang Tan, Bangguo Wang, Yao Xiao, Guoliang Deng, Jun Wang. Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions[J]. Infrared and Laser Engineering, 2022, 51(5): 20210979
Category: Lasers & Laser optics
Received: Dec. 17, 2021
Accepted: Mar. 3, 2022
Published Online: Jun. 14, 2022
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