Infrared and Laser Engineering, Volume. 51, Issue 5, 20210979(2022)

Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions

Jinchuan Dan1... Shaoyang Tan2, Bangguo Wang1, Yao Xiao1, Guoliang Deng1, and Jun Wang12 |Show fewer author(s)
Author Affiliations
  • 1College of Electronic Information, Sichuan University, Chengdu 610065, China
  • 2Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, China
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    Figures & Tables(8)
    Schematic diagram of basic waveguide structure.a, Double quantμm well single barrier structure; b, Double quantμm well three barriers structure; c, Double quantμm well three barriers, thickening N-side barrier
    (a) Effect of different waveguide structures on the limiting factor; (b) Effect of different waveguide structures on the threshold gain ratio
    Effect of different waveguide structures on slope efficiency
    (a) PIV curves of triple-active regions semiconductor lasers with waveguide of A1 (red), A2 (green), A3 (blue); (b) Far field divergence angles of triple-active regions semiconductor lasers with waveguides of A1 (red), A2 (green), A3 (blue) in the vertical direction
    (a) PIV curve of triple-active regions semiconductor laser with B waveguide structure; (b) Divergence angle of far field in vertical direction of triple-active regions semiconductor laser with B waveguide structure
    (a) PIV curves of semiconductor lasers in the triple-active regions (black)and quadruple-active regions (red) with C waveguide structure; (b) Far field divergence angles of semiconductor lasers in the triple -active regions (black) and quadruple-active regions (red) with C waveguide structure
    Variation trend of far-field divergence angle of semiconductor lasers with riple-active regions under different threshold gain ratios; measured (black), simulated (red)
    • Table 1. Device preparation parameters

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      Table 1. Device preparation parameters

      NumberGain region typeP-WG thickness/μmBarrier thickness /μmFundamental mode ГBulk resistance/ΩThreshold gain ratio
      A1a0.750.011.69%0.224.5
      A2a0.450.011.31%0.211.2
      A3a0.350.011.04%0.2050.9
      Bb0.350.031.59%0.181.6
      Cc0.250.071.58%0.182
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    Jinchuan Dan, Shaoyang Tan, Bangguo Wang, Yao Xiao, Guoliang Deng, Jun Wang. Effect of waveguide structure on beam quality and power of 905 nm cascade semiconductor lasers with tunnel junctions[J]. Infrared and Laser Engineering, 2022, 51(5): 20210979

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    Paper Information

    Category: Lasers & Laser optics

    Received: Dec. 17, 2021

    Accepted: Mar. 3, 2022

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.3788/IRLA20210979

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