Acta Optica Sinica, Volume. 39, Issue 5, 0504002(2019)
Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector
Figures & Tables(8)
Fig. 2. Simulated energy band diagrams of different device structures with InAsSbP blocking barrier. (a) nBip structure; (b) pBin structure; (c) nBn structure
Fig. 3. Normalized on-off ratio versus bandgap of blocking barrier for pBin detector
Fig. 4. Normalized on-off ratio versus thickness of blocking barrier for different device structures. (a) nBip structure; (b) pBin structure
Fig. 5. Normalized on-off ratio versus doping concentration of blocking barrier for different device structures. (a) nBip structure; (b) pBin structure
Fig. 6. Simulated energy band diagrams of nBip detector with doping concentration deviating from optimum value. (a) Lower than optimum value; (b) higher than optimum value
Fig. 7. Simulated energy band diagrams of pBin detector with doping concentration deviating from optimum value. (a) Lower than optimum value; (b) higher than optimum value
Table 1. Basic materials and structural parameters of InAs-based detector
View tableTable 1. Basic materials and structural parameters of InAs-based detector
Structure Thickness /μm Doping type Doping concentration /cm-3 /cm-3 Substrate (InAs) 500 p+ 2×1018 n+ 2×1018 Blocking barrier (InAsSbP) 0.01-0.5 p+ 1×1016-7×1018 n+ 1×1016-1×1019 Absorption layer (InAs0.89Sb0.11) 3 Intrinsic (n-) 1.5×1016 Contact layer (InAsSbP) 0.5 p+ 1×1017 n+ 1×1017
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Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002
Paper Information
Category: Detectors
Received: Oct. 25, 2018
Accepted: Jan. 21, 2019
Published Online: May. 10, 2019
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