Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Acta Optica Sinica, Volume. 39, Issue 5, 0504002(2019)

Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector

Hongyu Lin1,2, Hao Xie1,2, Yang Wang1,2, Hongbo Lu1,2, Yan Sun1, Shuhong Hu1、*, Xin Chen1, and Ning Dai1、*
Author Affiliations
  • 1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
    Equations (0)
    References (0)
    Cited By (1)
    Tools
    Paper Information
    Topics
    Cited By

    Article index updated:May. 21, 2024

    Citation counts are provided from Researching.
    The article is cited by 1 article(s) from Researching.
    Tools

    Get Citation

    Copy Citation Text

    Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Detectors

    Received: Oct. 25, 2018

    Accepted: Jan. 21, 2019

    Published Online: May. 10, 2019

    The Author Email:

    DOI:10.3788/AOS201939.0504002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology