Acta Optica Sinica, Volume. 39, Issue 5, 0504002(2019)
Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector
Introducing a blocking barrier with a wide bandgap can effectively lower the dark current of a traditional pn-junction infrared photodetector. The energy band diagrams of detectors are obtained by simulation using COMSOL software, and the simulation denotes that n- or p-type doping of the InAsSbP quaternary alloy sinks the valence band and lifts the conduction band in its energy map, thereby blocking holes or electrons. Through the theoretical analysis and simulation calculations, the compositions of InAsSbP necessary to satisfy the requirements of the blocking barrier are determined. The optimal values of the blocking-barrier thickness and doping concentration (particle-number concentration) are provided for the nBip and pBin infrared photodetectors by simulation, respectively. Further, the effects of the deviations from these optimal values on the dark currents of devices are analyzed. For the nBip detector, the maximum on-off ratio is obtained when the thickness and doping concentration are 40 nm and 2×10 18 cm -3, respectively, while for the pBin detector, the thickness and doping concentration are 60 nm and 4×10 17 cm -3, respectively.
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Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002
Category: Detectors
Received: Oct. 25, 2018
Accepted: Jan. 21, 2019
Published Online: May. 10, 2019
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