Infrared and Laser Engineering, Volume. 53, Issue 12, 20240333(2024)

Study on the factors affecting the spatial resolution of EBCMOS with uniformly doped substrate

Jiatong ZHENG1, De SONG1, Feng SHI2, Bei JIANG1, Tong ZHANG1, and Weijun CHEN1
Author Affiliations
  • 1School of Physics, Changchun University of Science and Technology, Changchun 130022, China
  • 2Science and Technology on Low-Light-Level Night Vision Laboratory, Xi’an 710065, China
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    Figures & Tables(8)
    (a) Structure of EBCMOS electron multiplier layer; (b) The trajectory diagram of electron movement in the blue dotted line box in (a)
    (a) Multiplier electron drop point diagram; (b) Statistical chart of landing point
    PSF images at different base thicknesses (The inner panel shows the top view of PSF)
    LSF curve (a) and MTF curve (b) under different base thickness
    PSF images at different substrate doping concentrations (The inner panel shows the top view of PSF)
    LSF curve (a) and MTF curve (b) under different substrate doping concentration
    PSF images at different incident electron energies (The inner panel shows the top view of PSF)
    LSF curve (a) and MTF curve (b) under different incident electron energies
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    Jiatong ZHENG, De SONG, Feng SHI, Bei JIANG, Tong ZHANG, Weijun CHEN. Study on the factors affecting the spatial resolution of EBCMOS with uniformly doped substrate[J]. Infrared and Laser Engineering, 2024, 53(12): 20240333

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    Paper Information

    Category: 光学器件

    Received: Sep. 1, 2024

    Accepted: --

    Published Online: Jan. 16, 2025

    The Author Email:

    DOI:10.3788/IRLA20240333

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