[1] R Turchetta, J D Berst, B Casadei. A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSL CMOS technology. Nucl Instrum Methods A, 458, 677-689(2001).

[2] 万磊, Lei Wan, 贾平, Ping Jia, 张叶, Ye Zhang. Effect of aircraft attitude imaging of CMOS aerial cameras. Optics and Precition Engineering, 24, 203-209(2016).

[3] V Goiffon, M Estribeau, P Magnan. Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology. IEEE Transactions on Electron Devices, 56, 2594-2601(2009).

[4] C Virmontois, V Goiffon, P Magnan. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. IEEE Transactions on Nuclear Science, 57, 5658069(2010).

[5] 冯婕, Jie Feng, 李豫东, Yudong Li, 文林, Lin Wen. Degradation mechanism for photon transfer curve of CMOS image sensor after irradiation. Optics and Precition Engineering, 25, 2676-2680(2017).

[6] 冯婕, Jie Feng, 李豫东, Yudong Li, 文林, Lin Wen. Influence mechanism of CMOS sensor radiation damage on the performance of visual position and attitude measurement system. Infrared and Laser Engineering, 46, S117002(2017).

[7] 马林东, Lindong Ma, 李豫东, Yudong Li, 郭旗, Qi Guo. Total ionizing dose radiation effects in 4T-CMOS image sensors at different biased conditions. Infrared and Laser Engineering, 47, 1017002(2018).

[8] Z J Wang, C J Liu, Y Ma. Degradation of CMOS APS image sensors induced by total ionizing dose radiation at different dose rates and biased condition.. IEEE Transactions on Nuclear Science, 62, 527-533(2015).

[9] Z J Wang, Y Ma, C J Liu. Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 820, 89-94(2016).

[10] [10] Aken D V, Dominique Hervé, Beaumel M. Total dose, displacement damage, single event effects in the radiation hardened CMOS APS HAS2[C]Senss, Systems, NextGeneration Satellites XIII. International Society f Optics Photonics, 2009.

[11] C Virmontois, V Goiffon, P Magnan. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology. IEEE Transactions on Nuclear Science, 57, 3101-3108(2010).

[12] J R Srour, R A Hartmann. Enhanced displacement damage effectiveness in irradiated silicon devices. IEEE Transactions on Nuclear Science, 36, 1825-1830(2002).

[13] Y L Cai, Y D Li, L Wen. Heavy ion-induced single event effects in active pixel sensor array. Solid-State Electronics, 152, 93-99(2019).

[14] D M Hiemstra, E W Blackmore. LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics. IEEE Transactions on Nuclear Science, 50, 2245-2250(2003).

[15] J R Schwank, M R Shaneyfelt, J Baggio. Effects of particle energy on proton-induced single-event latchup. Nsrec Seattle Washington, 52, 2622-2629(2005).