Fig. 1. Schematical representation of imaging ellipsometry setup operating in RCE mode. φ is the angle of incidence.

Fig. 2. Schematical representation of knife edge illumination method (Accurion) using the example of the double-sided polished transparent substrate. The sample area marked with the purple arrows is free of the backside reflections.

Fig. 3. a) Ellipsometric microscope image, b) Ψ-map with selected line profile and c) Δ-map with selected line profile of a triangular defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.

Fig. 4. a) Ψ-map with the histogram of Ψ values and b) Δ-map with the histogram of Δ values over the ROIs (black – ROI-0, red – ROI-1, blue – ROI-2) at λ = 550 nm and AOI = 45°.

Fig. 5. WLIM image and surface profiles of a triangular defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.

Fig. 6. WLIM 3D-images of a) the entire defect and b) the spherical area of defect on 12 μm 4H–SiC epilayer grown on 4H–SiC substrate.