Researching | The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy

Journal of Infrared and Millimeter Waves, Volume. 44, Issue 1, 1(2025)

The influence of V/III ratio on electron mobility of the InAs_xSb_1-_x layers grown on GaAs substrate by molecular beam epitaxy

Jing ZHANG1,*... Zhi YANG1, Li-Ming ZHENG2, Xiao-Juan ZHU1, Ping WANG1 and Lin YANG3 |Show fewer author(s)

Author Affiliations

¹School of Electronic Information and Artificial Intelligence，Shaanxi University of Science and Technology，Xi’an 710016，China

²School of Mechanical and Electrical Engineering，Xi’an Traffic Engineering Institute，Xi’an 710300，China

³School of Information Science and Engineering，Hebei University of Science and Technology，Shijiazhuang 050018，China

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References(27)

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Jing ZHANG, Zhi YANG, Li-Ming ZHENG, Xiao-Juan ZHU, Ping WANG, Lin YANG. The influence of V/III ratio on electron mobility of the InAs_xSb_1-_x layers grown on GaAs substrate by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2025, 44(1): 1

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Paper Information

Category: Infrared Physics, Materials and Devices

Received: Jan. 20, 2024

Accepted: --

Published Online: Mar. 5, 2025

The Author Email: ZHANG Jing (zhangjing6048@126.com)

DOI:10.11972/j.issn.1001-9014.2025.01.001

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology