Journal of Infrared and Millimeter Waves, Volume. 44, Issue 1, 1(2025)

The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy

Jing ZHANG1,*... Zhi YANG1, Li-Ming ZHENG2, Xiao-Juan ZHU1, Ping WANG1 and Lin YANG3 |Show fewer author(s)
Author Affiliations
  • 1School of Electronic Information and Artificial Intelligence,Shaanxi University of Science and Technology,Xi’an 710016,China
  • 2School of Mechanical and Electrical Engineering,Xi’an Traffic Engineering Institute,Xi’an 710300,China
  • 3School of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang 050018,China
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    Figures & Tables(15)
    Schematic diagram of InAsxSb1-x thin film structure
    Schematic diagram of Al0.2In0.8Sb/ InAsxSb1-x quantum well heterostructures
    (a) 2×2 μm2 AFM image of samples A1, A2, A3; (b) 10×10 μm2 AFM image of samples A1, A2, A3
    HRXRD scanning curves of (a) (004) peak and (b) (115) peak for various samples.
    XRD RSMs of the symmetrical(004)(a) sample A1;(b) sample A2 and(c) sample A3
    Electron mobility μ and 2DEG concentrations ns versus different Sb/In ratios for samples A1,A2,A3
    10×10 μm2 AFM image of samples B1,B2,B3
    HRXRD scanning curves of(004) peak for samples B1,B2,B3
    Electron mobility μ and 2DEG concentrations ns versus different Sb/In ratios
    10×10 μm2 AFM image of samples C1,C2,C3
    HRXRD scanning curves of(004) peak for samples C1,C2,C3
    Electron mobility μ and 2DEG concentrations ns versus different As/In ratios
    Electron mobility μ and 2DEG concentration ns versus different channel thickness
    • Table 1. Results calculated from HRXRD measurements

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      Table 1. Results calculated from HRXRD measurements

      Sample(004)scanning(115)scanninga(Å)1-X
      Bragg anglea⊥(Å)Bragg anglea//(Å)
      A129.06°6.343 539.08°6.349 16.346 40.68
      A229.08°6.339 539.62°6.276 56.306 80.6
      A328.73°6.4138.64°6.409 96.409 90.84
    • Table 2. Summary of literature data about the structural properties of InAsxSb1-x thin films.

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      Table 2. Summary of literature data about the structural properties of InAsxSb1-x thin films.

      RefSb composition

      Thickness

      (nm)

      RMS roughness

      (nm)

      Electron mobility

      (cm2/V·s)

      2DEG concentrations

      (cm-3

      210.581 5001.9(10×10 μm2--
      240.135 000-25 0005 × 1016
      250.058003.954(2×2 μm25 4301.01×1017
      260.91 0001.99(10×10 μm213 0001.3×1017
      This work0.62000.7(10×10 μm228 5601.01 ×1018
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    Jing ZHANG, Zhi YANG, Li-Ming ZHENG, Xiao-Juan ZHU, Ping WANG, Lin YANG. The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2025, 44(1): 1

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    Paper Information

    Category: Infrared Physics, Materials and Devices

    Received: Jan. 20, 2024

    Accepted: --

    Published Online: Mar. 5, 2025

    The Author Email: Jing ZHANG (zhangjing6048@126.com)

    DOI:10.11972/j.issn.1001-9014.2025.01.001

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