Journal of Infrared and Millimeter Waves, Volume. 44, Issue 1, 1(2025)
The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
Fig. 2. Schematic diagram of Al0.2In0.8Sb/ InAsxSb1-x quantum well heterostructures
Fig. 3. (a) 2×2 μm2 AFM image of samples A1, A2, A3; (b) 10×10 μm2 AFM image of samples A1, A2, A3
Fig. 4. HRXRD scanning curves of (a) (004) peak and (b) (115) peak for various samples.
Fig. 5. XRD RSMs of the symmetrical(004)(a) sample A1;(b) sample A2 and(c) sample A3
Fig. 6. Electron mobility μ and 2DEG concentrations ns versus different Sb/In ratios for samples A1,A2,A3
Fig. 9. Electron mobility μ and 2DEG concentrations ns versus different Sb/In ratios
Fig. 12. Electron mobility μ and 2DEG concentrations ns versus different As/In ratios
Fig. 13. Electron mobility μ and 2DEG concentration ns versus different channel thickness
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Jing ZHANG, Zhi YANG, Li-Ming ZHENG, Xiao-Juan ZHU, Ping WANG, Lin YANG. The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2025, 44(1): 1
Category: Infrared Physics, Materials and Devices
Received: Jan. 20, 2024
Accepted: --
Published Online: Mar. 5, 2025
The Author Email: Jing ZHANG (zhangjing6048@126.com)